Issue 45, 2021

Spin selectivity in chiral metal–halide semiconductors

Abstract

Controlling the spin states of freedom represents a significant challenge for the next-generation optoelectronic and spintronic devices. Chiral metal–halide semiconductors (MHS) have recently emerged as an important class of materials for spin-dependent photonic and electronic applications. In this Minireview, we first discussed the chemical and structural diversity of chiral MHS, highlighting the chirality formation mechanism. We then provided our current understanding on the spin-sensitive photophysical and transport process with a focus on how chirality enables the spin selectivity in chiral MHS. We summarized recent progress on the experimental demonstration of spin control in various photonic and spintronic devices. Finally, we discussed ongoing challenges and opportunities associated with chiral MHS.

Graphical abstract: Spin selectivity in chiral metal–halide semiconductors

Article information

Article type
Minireview
Submitted
29 ستمبر 2021
Accepted
08 نومبر 2021
First published
09 نومبر 2021

Nanoscale, 2021,13, 18925-18940

Spin selectivity in chiral metal–halide semiconductors

T. Feng, Z. Wang, Z. Zhang, J. Xue and H. Lu, Nanoscale, 2021, 13, 18925 DOI: 10.1039/D1NR06407J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements