Issue 39, 2019

Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications

Abstract

High-performance ultraviolet (UV) photodetectors have been attracting extensive attention, due to their great importance in both military and civil applications. In recent years, the rapid development of two-dimensional (2D) materials with unique and excellent optoelectrical properties has provided an ideal platform for developing high-performance photodetectors. In this work, large-area 2D WS2 films were synthesized and a WS2/GaN heterojunction was constructed. The as-fabricated WS2/GaN heterojunction device has demonstrated high-sensitivity and self-powered photoresponse properties to UV signals with a large photoresponsivity of 226 mA W−1, and an ultrahigh large specific detectivity of 4 × 1014 Jones, as well as fast response speeds at zero bias. Furthermore, a high-resolution UV imaging result with high contrast is achieved by using the as-fabricated photodetector as a sensing pixel. The results demonstrated in this work suggest that WS2/GaN heterojunction devices have great potential in high-performance UV detection and imaging applications.

Graphical abstract: Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications

Supplementary files

Article information

Article type
Paper
Submitted
17 Jul 2019
Accepted
15 Sep 2019
First published
17 Sep 2019

J. Mater. Chem. C, 2019,7, 12121-12126

Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications

Z. Zhao, D. Wu, J. Guo, E. Wu, C. Jia, Z. Shi, Y. Tian, X. Li and Y. Tian, J. Mater. Chem. C, 2019, 7, 12121 DOI: 10.1039/C9TC03866C

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