Novel valley character and tunable quasi-half-valley metal state in Janus monolayer VSiGeP4

Kang Jia, Xiao-Jing Dong, Sheng-Shi Li, Wei-Xiao Ji and Chang-Wen Zhang

Phys. Chem. Chem. Phys., 2024, 26, 4683
DOI: 10.1039/D3CP05636H

Strain-tuning of perpendicular magnetic anisotropy and valley topological phase transition in the SVNH monolayer

Xiang-Jie Chen, Zhen Gao, Yong-Hu Xu, Meng-Ran Qin, Yao He and Kai Xiong

J. Mater. Chem. C, 2025, 13, 1945
DOI: 10.1039/D4TC03757J

External field-engineered tunable chern number and valley-polarized quantum anomalous hall effect in Ti3S3Te2 monolayer

Xiaokang Xu, Jinlian Lu, Huijie Lian, Ying Han, Yongjun Liu, Xueke Yu, Ailei He, Xiaojing Yao and Xiuyun Zhang

J. Mater. Chem. C, 2025, 13, 2330
DOI: 10.1039/D4TC04282D

Tunable abundant valley Hall effect and chiral spin–valley locking in Janus monolayer VCGeN4

Kang Jia, Xiao-Jing Dong, Sheng-Shi Li, Wei-Xiao Ji and Chang-Wen Zhang

Nanoscale, 2024, 16, 8639
DOI: 10.1039/D3NR05643K

Tunable valley polarization effect and second-order topological state in monolayer FeClSH

Mengteng Chen, Xiangru Kong, Xiao Xie, Xiaobiao Liu, Jia Li, François M. Peeters and Linyang Li

Phys. Chem. Chem. Phys., 2024, 26, 3285
DOI: 10.1039/D3CP05127G

Strain-driven topological quantum phase transition in (pseudo)cubic (mixed)-Cs/MA/FA halide perovskites

Ankita Phutela, Sajjan Sheoran, Deepika Gill and Saswata Bhattacharya

J. Mater. Chem. C, 2024, 12, 2165
DOI: 10.1039/D3TC03348A

Stacking-tuned quantum anomalous Hall effect and multi-phase transition in Kagome lattice V2Se3

Lixin Zhang, Naibin Wang, Xiuwen Zhao, Guichao Hu, Junfeng Ren and Xiaobo Yuan

J. Mater. Chem. C, 2024, 12, 16981
DOI: 10.1039/D4TC03058C

Valley topological phase transitions under the combined effects of electronic correlation and strain in the H-TiSeBr monolayer

Xiang-Jie Chen, Yong-Hu Xu, Meng-Ran Qin, Pei Zhang, Zhen Gao, Yao He and Kai Xiong

J. Mater. Chem. C, 2025, 13, 13061
DOI: 10.1039/D5TC01288K

Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations

Jie Li, Ya-Qing Chen, Hong-Kuan Yuan and Chun-Ling Tian

Nanoscale, 2024, 16, 18504
DOI: 10.1039/D4NR01692K

Strain-Induced Nontrivial Topology and a Negative Poisson’s Ratio in the Sn2BN Monolayer

Kunyue Shi, Didi Zhao, Shengshi Li, Weixiao Ji, Changwen Zhang and Peiji Wang

ACS Appl. Electron. Mater., 2024, 6, 174
DOI: 10.1021/acsaelm.3c00954

Janus monolayers Fe2SSeX2 (X = Ga, In, and Tl): Robust nontrivial topology with high Chern number

Kang 康 Jia 贾, Xiao-Jing 晓晶 Dong 董, Pei-Ji 培吉 Wang 王 and Chang-Wen 昌文 Zhang 张

Chinese Phys. B, 2024, 33, 127103
DOI: 10.1088/1674-1056/ad7c2a

Valley manipulation by external fields in two-dimensional materials and their hybrid systems

Ya-Ping Shao, Yun-Qin Li, Jun-Ding Zheng, Yi-Fan Tan, Zhao Guan, Ni Zhong, Fang-Yu Yue, Wen-Yi Tong and Chun-Gang Duan

J. Phys.: Condens. Matter, 2025, 37, 053003
DOI: 10.1088/1361-648X/ad8f81

The quantum anomalous Hall effect in two-dimensional hexagonal monolayers studied by first-principles calculations

Lixin Zhang, Hongxin Chen, Junfeng Ren and Xiaobo Yuan

iScience, 2025, 28, 111622
DOI: 10.1016/j.isci.2024.111622

First-principles investigation of two-dimensional iron molybdenum nitride: A double transition-metal cousin of MoSi2N4(MoN) monolayer with distinctive electronic and topological properties

Yi Ding and Yanli Wang

Front. Phys., 2024, 19
DOI: 10.1007/s11467-024-1431-6

Ferrimagnetic second-order topological insulator with valley polarization in two-dimensional magnet

Xin-yu Liu, Wei-xiao Ji, Meng Ding, Sheng-shi Li and Chang-wen Zhang

Applied Physics Letters, 2024, 125
DOI: 10.1063/5.0219250

Symmetry-Protected Two-Dimensional Half-Semi-Metal NiVS6As2 Monolayer

Meng-xue Zhu, Wei-xiao Ji, Hui-wen Zhu, Qiang Cao and Bao-min Zhang

J. Electron. Mater., 2024, 53, 6250
DOI: 10.1007/s11664-024-11321-4

Tuning the Magnetization Direction and Valley Splitting of Monolayer Ferrovalley CrISe: Implications for Spintronics and Valleytronics Devices

Zhenzhen Wan, Wenzhe Zhou, Guibo Zheng, Haiming Duan, Yu Chen and Fangping Ouyang

ACS Appl. Nano Mater., 2025, 8, 2466
DOI: 10.1021/acsanm.4c06703

Large‐Gap Quantum Spin Hall State in Double‐Transition‐Metal Homologous Compounds of WSi2N4: A First‐Principles Study

Yanli Wang and Yi Ding

Physica Rapid Research Ltrs, 2024, 18
DOI: 10.1002/pssr.202300376

Orbital Hall effect characterizing higher-order topological phase transitions in monolayers of ferromagnetic materials

Ning-Jing Yang, Jun-Hao Li, Zhigao Huang and Jian-Min Zhang

Phys. Rev. B, 2025, 111
DOI: 10.1103/7bth-zkv6

Density Functional Theory Study of Topological Phase Transition and Valley Polarization in RuOHCl Monolayer: Implications for Valleytronics and Spintronics Devices

Haofeng Wei, Yanzhao Wu, Junwei Tong, Li Deng, Xiang Yin, Fubo Tian and Xianmin Zhang

ACS Appl. Nano Mater., 2024, 7, 6047
DOI: 10.1021/acsanm.3c05942

Valleytronics in two-dimensional magnetic materials

Chaobo Luo, Zongyu Huang, Hui Qiao, Xiang Qi and Xiangyang Peng

J. Phys. Mater., 2024, 7, 022006
DOI: 10.1088/2515-7639/ad3b6e

Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI2 van der Waals heterostructure

Xiao-Jing 晓晶 Dong 董 and Chang-Wen 昌文 Zhang 张

Chinese Phys. B, 2024, 33, 077303
DOI: 10.1088/1674-1056/ad4bbd

Realization of Dual Anomalous Valley Hall Effect in Antiferromagnetic HfN2/MnPSe3 Heterostructure

Xiao-jing Dong, Kang Jia, Wei-xiao Ji, Sheng-shi Li and Chang-Wen Zhang

ACS Appl. Electron. Mater., 2024, 6, 679
DOI: 10.1021/acsaelm.3c01032

Tunable Sliding Ferroelectricity, Valley Polarization, and Layer-Polarized Anomalous Valley Hall Effect in the RuO2Si2N2 Bilayer: Insights from First-Principles

Yanli Wang and Yi Ding

J. Phys. Chem. C, 2025
DOI: 10.1021/acs.jpcc.5c04480