Memristors based on 2D MoSe2 nanosheets as artificial synapses and nociceptors for neuromorphic computing

Huan Duan, Dehui Wang, Jingxi Gou, Feng Guo, Wenjing Jie and Jianhua Hao

Nanoscale, 2023, 15, 10089
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Boron nitride memristors: from mechanism and device optimization to integrated applications

Xuan Chen, Ting-Ting Guo, Xiang Chen, Hao-Wei Tao, Shuo-Heng Niu, Xiu-Feng Song and Hai-Bo Zeng

Nanoscale, 2025, 17, 24830
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Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?

Deependra Kumar Singh and Govind Gupta

Mater. Adv., 2024, 5, 3158
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Recent advances in flexible memristors for advanced computing and sensing

Jiaming Xu, Ziwang Luo, Long Chen, Xuhui Zhou, Haozhe Zhang, Yuanjin Zheng and Lei Wei

Mater. Horiz., 2024, 11, 4015
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2D multifunctional devices: from material preparation to device fabrication and neuromorphic applications

Zhuohui Huang, Yanran Li, Yi Zhang, Jiewei Chen, Jun He and Jie Jiang

Int. J. Extrem. Manuf., 2024, 6, 032003
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Transition Metal Anchored Novel Holey Boron Nitride Analogues as Single‐Atom Catalysts for the Hydrogen Evolution Reaction

Esackraj Karthikraja, Chandra Chowdhury, Naga Venkateswara Rao Nulakani, Kothandaraman Ramanujam, V. G. Vaidyanathan and Venkatesan Subramanian

Chemistry An Asian Journal, 2025, 20
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Graphene-interfaced h-BN memristor for reliable computing and secure encryption

Ruoyao Sun, Chao Dou, Yan Wang, Haoyue Lu, Xuan Deng, Yueying Li, Liefeng Feng and Jing Liu

Chemical Engineering Journal, 2026, 530, 173659
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Ab Initio Analysis of the Filamentary Behavior Assisted by Ionic Boron Frenkel-Pair Defects in h-BN Planar-Atomristor

Srungarapu Leela Nagendra, Vikash Mishra, M. Julie Therese and Tejendra Dixit

IEEE Electron Device Lett., 2024, 45, 2561
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Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices

Muhammad Hamza Pervez, Ehsan Elahi, Muhammad Asghar Khan, Muhammad Nasim, Muhammad Asim, Arslan Rehmat, Malik Abdul Rehman, Mohammed A. Assiri, Shania Rehman, Jonghwa Eom and Muhammad Farooq Khan

Small Structures, 2025, 6
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A review of MXene memristors and their applications

Mrinal K. Hota, Sebastian Pazos, Mario Lanza and Husam N. Alshareef

Materials Science and Engineering: R: Reports, 2025, 164, 100983
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Thermally Tunable Analog Memristive Behaviors in Sulfurized In2Se3 Nanoflakes for Bio-Plausible Synaptic Devices

Song Hao, Yanfang Niu, Shancheng Han, Jingjie Li, Nan Wang and Xiaogan Li

ACS Appl. Nano Mater., 2023, 6, 12393
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Mechanisms of resistive switching in two-dimensional monolayer and multilayer materials

M. Kaniselvan, Y.-R. Jeon, M. Mladenović, M. Luisier and D. Akinwande

Nat. Mater., 2025, 24, 1346
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Two-Dimensional Materials for Brain-Inspired Computing Hardware

Shreyash Hadke, Min-A Kang, Vinod K. Sangwan and Mark C. Hersam

Chem. Rev., 2025, 125, 835
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Recent progress of low-voltage memristor for neuromorphic computing

Yi-Chun Gong, Jian-Yu Ming, Si-Qi Wu, Ming-Dong Yi, Ling-Hai Xie, Wei Huang and Hai-Feng Ling

Acta Phys. Sin., 2024, 73, 207302
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Sustainable vertically-oriented graphene-electrode memristors for neuromorphic applications

Ben Walters, Michael S.A. Kamel, Mohan V. Jacob and Mostafa Rahimi Azghadi

FlatChem, 2024, 48, 100755
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Recent Advancements in 2D Material-Based Memristor Technology Toward Neuromorphic Computing

Sungmin Park, Muhammad Naqi, Namgyu Lee, Suyoung Park, Seongin Hong and Byeong Hyeon Lee

Micromachines, 2024, 15, 1451
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Hexagonal Boron Nitride Memristor with Ultralow Operating Voltage Enabled by Noninvasive vdWs Electrode

Yu Kang, Xingyu Zhai, Quan Yang, Jiayang Hu, Zhixiang Zhang, Jialei Miao, Haohan Chen, Dong Pu, Huan Hu, Wenchao Chen, Yuda Zhao and Bin Yu

ACS Materials Lett., 2025, 7, 2574
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Interface engineering for enhanced memristive devices and neuromorphic computing applications

Ming Xiao, Daozhi Shen and Jijie Huang

International Materials Reviews, 2025, 70, 205
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Emulating Ebbinghaus forgetting behavior in a neuromorphic device based on low dimensional h-BN

Ashly Sunny and R. Thamankar

AIP Advances, 2024, 14
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Artificial synaptic memristors based on egg albumen-gold nanoparticle nanocomposites

Lu Wang, Tianyu Yang, Yuehang Ju, Chunhao Li and Yuhang Tian

Journal of Alloys and Compounds, 2025, 1032, 181205
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Non-volatile, high on/off ratio, durable memristor devices based on ScAlN for artificial synapse

Cong Han, Haiming Qin, Rui Hu, Weijing Shao, Hanbing Fang, Hao Zhang, Xinpeng Wang, Yu Wang, Yi Liu and Yi Tong

Materials Science in Semiconductor Processing, 2026, 201, 110025
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A Plasmonic Optoelectronic Resistive Random‐Access Memory for In‐Sensor Color Image Cryptography

Quan Yang, Yu Kang, Cheng Zhang, Haohan Chen, Tianjiao Zhang, Zheng Bian, Xiangwei Su, Wei Xu, Jiabao Sun, Pan Wang, Yang Xu, Bin Yu and Yuda Zhao

Advanced Science, 2024, 11
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Doping Mn ions at Co sites to improve resistive switching property of inverse spinel CoFe2O4 resistive random access memory devices

Zhuoyang Lou, Ling Du, Qi Liao, Ni Qin and Dinghua Bao

Applied Surface Science, 2025, 692, 162724
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Efficient surface defect engineering in boron nitride for advanced photocatalytic applications: DFT analysis, strategies, and catalytic performance

Balvinder Kaur, Pardeep Singh, Sonu, Archana Singh, Quyet Van Le, Van-Huy Nguyen, Aftab Aslam Parwaz Khan, Mohammad Asad, Pankaj Raizada and Khalid A. Alzahrani

Journal of Physics and Chemistry of Solids, 2026, 211, 113405
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Multilevel Nonvolatile Memory by CMOS-Compatible and Transfer-free Amorphous Boron Nitride Film

Seyed Mehdi Sattari-Esfahlan, Sang-Hwa Hyun, Ji-Yun Moon, Keun Heo and Jae-Hyun Lee

ACS Appl. Electron. Mater., 2024, 6, 7781
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Dedicated and Reconfigurable Artificial Neurons and Synapses based on Two-Dimensional Materials for Efficient Neuromorphic Application

Danke Chen, Peizhi Yu, Yuning Li, Jingwei Shang, Haoyuan Wu, Xuan Yao, Xiaoqiu Tang, Chunlong Li, Mingqiang Zhu, Chang Gao, Jingye Sun, He Tian and Tao Deng

Nano-Micro Lett., 2026, 18
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Electronic transport simulations of Ni/graphene, hBN, MoSe2/Ni vertical junctions

Gaëlle Bigeard, Zineb Kerrami, François Triozon and Alessandro Cresti

Nanotechnology, 2025, 36, 285201
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Ultraflat single-crystal hexagonal boron nitride film grown on Cu/Ni (1 1 1) for high-performance deep ultraviolet photodetectors

Xin Zhang, Hongying Yang, Zhen Su, Yuqing Tian, Yuming Feng, Yanan Ding, Huiwen Ren, Linben Ling, Xiaolei Chen, Haiying Xiao and PingAn Hu

Chemical Engineering Journal, 2025, 515, 163316
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Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processing

Dong Yeon Woo, Gichang Noh, Eunpyo Park, Min Jee Kim, Dae Kyu Lee, Yong Woo Sung, Jaewook Kim, YeonJoo Jeong, Jongkil Park, Seongsik Park, Hyun Jae Jang, Nakwon Choi, Yooyeon Jo and Joon Young Kwak

Neuromorph. Comput. Eng., 2024, 4, 034001
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Zirconium-doping improved resistive switching characteristics of cobalt oxide resistive random access memory devices

Qi Liao, Ling Du, Ni Qin, Zhuoyang Lou and Dinghua Bao

J Mater Sci: Mater Electron, 2025, 36
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Stochasticity-by-Design in Memristive Materials for Probabilistic Computing and Hardware Security: Entropy Sources, Control Knobs, and Benchmarks

Daiyang Jiang, Changtian Cao, Junming Zhang, Ouwen Zhang, Chuqian Zhu, Jiyang Xu, Qinyan Zhang, Wenhao Li, Yumin Da, Xiangshui Miao, Zuhao Shi and Huajun Sun

ACS Appl. Electron. Mater., 2026, 8, 1492
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Dual‐Way Alternation Sensing Memristors Based on (BA)2(MA)3Pb4Br13 Ferroelectric Quantum Dots with Sub‐0.16 V Switching for Broadband Image‐Recognition Systems

Hong Wang, Runyao Lin, Kangbo Zhao, Jialiang Yang, Haoning Liu, Zheng Yang and Xiaobing Yan

Adv Funct Materials, 2025, 35
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Stabilization of hBN/SiC heterostructures with vacancies and transition-metal atoms

Arsalan Hashemi, Nima Ghafari Cherati, Sadegh Ghaderzadeh, Yanzhou Wang, Mahdi Ghorbani-Asl and Tapio Ala-Nissila

Phys. Rev. Materials, 2026, 10
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An Analogue Memristor Based on Conjugated Porous Polymer Composite for Artificial Synapse

Haotian Hao, Xiong Jiao, Guangdong Zhou, Lin Chen, Mixue Wang, Jintao He, Xiaochen Lang, Jiyun Zhang, Linlin Shi, Meiwen An, Lingpeng Yan, Yizhi Zhu and Yongzhen Yang

Exploration, 2026, 6
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Technology and Integration Roadmap for Optoelectronic Memristor

Jinyong Wang, Nasir Ilyas, Yujing Ren, Yun Ji, Sifan Li, Changcun Li, Fucai Liu, Deen Gu and Kah‐Wee Ang

Advanced Materials, 2024, 36
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Ni Single‐Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention

Hua‐Xin Li, Qing‐Xiu Li, Fu‐Zhi Li, Jia‐Peng Liu, Guo‐Dong Gong, Yu‐Qi Zhang, Yan‐Bing Leng, Tao Sun, Ye Zhou and Su‐Ting Han

Advanced Materials, 2024, 36
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2D materials-memristive devices nexus: From status quo to Impending applications

Muhammad Muqeet Rehman, Yarjan Abdul Samad, Jahan Zeb Gul, Muhammad Saqib, Maryam Khan, Rayyan Ali Shaukat, Rui Chang, Yijun Shi and Woo Young Kim

Progress in Materials Science, 2025, 152, 101471
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Thinner 2D α-MoO3 makes setting up memristors easier

Yukun Hong, Shangui Lan, Baojun Pan, Zhixiang Zhang, Bingbing Chen, Lijie Zhang and Peijian Wang

Journal of Materiomics, 2024, 10, 1279
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Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou and Sayani Majumdar

Advanced Materials, 2026
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On-chip direct synthesis of boron nitride memristors

Jing Xie, Ali Ebadi Yekta, Fahad Al Mamun, Kaichen Zhu, Maolin Chen, Sebastian Pazos, Wenwen Zheng, Xixiang Zhang, Seth Ariel Tongay, Xinyi Li, Huaqiang Wu, Robert Nemanich, Deji Akinwande, Mario Lanza and Ivan Sanchez Esqueda

Nat. Nanotechnol., 2025, 20, 1596
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Ce-doping at Mn site to enhance resistive switching performance of spinel MnCo2O4 resistive random access memory devices

Ling Du, Jiacheng Li, Qi Liao, Ni Qin and Dinghua Bao

Ceramics International, 2024, 50, 20495
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Amorphous boron nitride: synthesis, properties and device application

Seyed Mehdi Sattari-Esfahlan, Saeed Mirzaei, Mukkath Joseph Josline, Ji-Yun Moon, Sang-Hwa Hyun, Houk Jang and Jae-Hyun Lee

Nano Convergence, 2025, 12
DOI: 10.1186/s40580-025-00486-1

Nanomaterials for Flexible Neuromorphics

Guanglong Ding, Hang Li, JiYu Zhao, Kui Zhou, Yongbiao Zhai, Ziyu Lv, Meng Zhang, Yan Yan, Su-Ting Han and Ye Zhou

Chem. Rev., 2024, 124, 12738
DOI: 10.1021/acs.chemrev.4c00369