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Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality
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Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer
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Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing
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Hafnium‐Based Ferroelectric Field‐Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges
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Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0.5Zr0.5O2 films by adopting oxygen-supplying electrode
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Enhanced Reliability, Switching Speed and Uniformity for Ferroelectric HfZrO x on Epitaxial Ge Film by Post Deposition Annealing for Oxygen Vacancy Control
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Integration of Ferroelectric and 2D Materials for Next-Generation High-performance Electronics
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Structure, performance regulation and typical device applications of HfO2-based ferroelectric films
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Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS
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Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts
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Effect of postdeposition annealing on the ferroelectricity of ultrathin Hf0.5Zr0.5O2 films
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Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors
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Improving the endurance for ferroelectric Hf0.5Zr0.5O2 thin films by interface and defect engineering
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The Imprint Failure and Suppression of the Multi‐Level Memory in HfAlOx Ferroelectric Capacitor
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In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films
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Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode
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