β-Ga2O3 heterojunction field-effect transistors prepared via UV laser-assisted p-doping of two-dimensional WSe2

Sanghyun Moon, Jinho Bae and Jihyun Kim

J. Mater. Chem. C, 2022, 10, 6281
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State-of-the-art surface oxide semiconductors of liquid metals: an emerging platform for development of multifunctional two-dimensional materials

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J. Mater. Chem. A, 2021, 9, 34
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Synthesis and optoelectronics of mixed-dimensional Bi/Te binary heterostructures

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Nanoscale Horiz., 2020, 5, 847
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Deep-level defects and carrier manipulation in Sn-doped β-Ga2O3 (100) single crystals

Jiahao Yao, Yiyuan Liu, Zhaoxuan Fang, Zhengpeng Wang, Na Sun, Hehe Gong, Wenxiang Mu, Zhitai Jia, Xutang Tao, Fangfang Ren, Shulin Gu, Rong Zhang and Jiandong Ye

Sci. China Mater., 2025, 68, 2274
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Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

Alexander Y. Polyakov, Vladimir I. Nikolaev, Eugene B. Yakimov, Fan Ren, Stephen J. Pearton and Jihyun Kim

Journal of Vacuum Science & Technology A, 2022, 40
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Benchmarking β‐Ga2O3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy

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Adv Elect Materials, 2020, 6
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Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

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Nano Lett., 2021, 21, 2666
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Effects of Downstream Plasma Exposure on β-Ga2O3 Rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Junghun Kim, Jihyun Kim, Marko Tadjer and Stephen J. Pearton

ECS J. Solid State Sci. Technol., 2021, 10, 065005
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Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers

Ribhu Sharma, Minghan Xian, Mark E. Law, Marko Tadjer, Fan Ren and Stephen J. Pearton

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020, 38
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Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3

Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren and S. J. Pearton

Journal of Vacuum Science & Technology A, 2023, 41
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Squeeze-Printing Ultrathin 2D Gallium Oxide out of Liquid Metal for Forming-Free Neuromorphic Memristors

Yimeng Xu, Jie Zhang, Xu Han, Xiaojie Wang, Caiyang Ye, Wenxiang Mu, Zhitai Jia and Kai Qian

ACS Appl. Mater. Interfaces, 2023, 15, 25831
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Enhanced Leakage Current and On-Resistance of β Gallium Oxide Schottky Barrier Diodes Using Effective Surface Modification

Ho Jung Jeon, Madani Labed, Jang Hyeok Park, Chowdam Venkata Prasad, S.J. Pearton and You Seung Rim

ACS Appl. Electron. Mater., 2025, 7, 4191
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