Issue 5, 2024

Fully printed memristors made with MoS2 and graphene water-based inks

Abstract

2-Dimensional materials (2DMs) offer an attractive solution for the realization of high density and reliable memristors, compatible with printed and flexible electronics. In this work we fabricate a fully inkjet printed MoS2-based resistive switching memory, where graphene is used as top electrode and silver is used as bottom electrode. Memristic effects are observed only after annealing of each printed component. The printed memory on silicon shows low SET/RESET voltage, short switching times (less than 0.1 s) and resistance switching ratios of 103–105, comparable or superior to the performance obtained in devices with both printed silver electrodes on rigid substrates. The same device on Kapton shows resistance switching ratios of 102–103 and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.

Graphical abstract: Fully printed memristors made with MoS2 and graphene water-based inks

Supplementary files

Article information

Article type
Communication
Submitted
03 8 2023
Accepted
21 12 2023
First published
26 12 2023
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2024,11, 1344-1353

Fully printed memristors made with MoS2 and graphene water-based inks

Z. Peng, A. Grillo, A. Pelella, X. Liu, M. Boyes, X. Xiao, M. Zhao, J. Wang, Z. Hu, A. Di Bartolomeo and C. Casiraghi, Mater. Horiz., 2024, 11, 1344 DOI: 10.1039/D3MH01224G

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