Issue 12, 2023

Water-based 2-dimensional anatase TiO2 inks for printed diodes and transistors

Abstract

2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of fundamental importance to develop a printable dielectric ink, providing good insulation and the ability to withstand large electric fields. Hexagonal boron nitride (h-BN) is typically used as a dielectric in printed devices. However, the h-BN film thickness is usually above 1 μm, hence limiting the use of h-BN in low-voltage applications. Furthermore, the h-BN ink is composed of nanosheets with broad lateral size and thickness distributions, due to the use of liquid-phase exfoliation (LPE). In this work, we investigate anatase TiO2 nanosheets (TiO2-NS), produced by a mass scalable bottom-up approach. We formulate the TiO2-NS into a water-based and printable solvent and demonstrate the use of the material with sub-micron thickness in printed diodes and transistors, hence validating the strong potential of TiO2-NS as a dielectric for printed electronics.

Graphical abstract: Water-based 2-dimensional anatase TiO2 inks for printed diodes and transistors

Supplementary files

Article information

Article type
Paper
Submitted
18 10 2022
Accepted
03 2 2023
First published
16 2 2023
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2023,15, 5689-5695

Water-based 2-dimensional anatase TiO2 inks for printed diodes and transistors

O. Kassem, L. Pimpolari, C. Dun, D. K. Polyushkin, M. Zarattini, E. Dimaggio, L. Chen, G. Basso, F. Parenti, J. J. Urban, T. Mueller, G. Fiori and C. Casiraghi, Nanoscale, 2023, 15, 5689 DOI: 10.1039/D2NR05786G

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