Issue 4, 2023

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

Abstract

GaN is an important III–V semiconductor for a variety of applications owing to its large direct band gap. GaN nanowires (NWs) have demonstrated significant potential as critical building blocks for nanoelectronics and nanophotonic devices, as well as integrated nanosystems. We present a comprehensive analysis of the vapor–liquid–solid (VLS) as a general synthesis technique for NWs on a variety of substrates, the morphological and structural characterization, and applications of GaN NWs in piezoelectric nanogenerators, light-emitting diodes, and solar-driven water splitting. We begin by summarizing the overall VLS growth process of GaN NWs, followed by the growth of NWs on several substrates. Subsequently, we review the various uses of GaN NWs in depth.

Graphical abstract: Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

Article information

Article type
Review Article
Submitted
16 10 2022
Accepted
17 1 2023
First published
18 1 2023
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2023,5, 1023-1042

Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications

A. Abdullah, M. A. Kulkarni, H. Thaalbi, F. Tariq and S. Ryu, Nanoscale Adv., 2023, 5, 1023 DOI: 10.1039/D2NA00711H

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