Issue 29, 2022

A low-temperature thermal ALD process for nickel utilizing dichlorobis(triethylphosphine)nickel(ii) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine

Abstract

In this work, we developed a new ALD process for nickel metal from dichlorobis(triethylphosphine)nickel(II) (NiCl2(PEt3)2) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine ((Me3Ge)2DHP). A series of phosphine adducts of nickel and cobalt halides were synthesized and characterized for their volatility and thermal stability. Also (Me3Ge)2DHP is a novel reducing agent in ALD. Smooth nickel films were deposited on different substrate materials at 110 °C, which is the lowest deposition temperature for Ni metal found in the literature. The growth rate is 0.2 Å per cycle when the film is not continuous and decreases to 0.1 Å per cycle after the film becomes pinhole-free. Besides a small amount (7 at%) of carbidic carbon, the films have only small amounts of impurities. Most notably, the chlorine content is below 0.2 at%, indicating efficient reduction. Furthermore, we think that (Me3Ge)2DHP can open new avenues for the ALD of other metals at low temperatures.

Graphical abstract: A low-temperature thermal ALD process for nickel utilizing dichlorobis(triethylphosphine)nickel(ii) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine

Supplementary files

Article information

Article type
Paper
Submitted
29 4 2022
Accepted
24 6 2022
First published
25 6 2022
This article is Open Access
Creative Commons BY license

Dalton Trans., 2022,51, 10898-10908

A low-temperature thermal ALD process for nickel utilizing dichlorobis(triethylphosphine)nickel(II) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine

A. Vihervaara, T. Hatanpää, K. Mizohata, M. Chundak, G. Popov and M. Ritala, Dalton Trans., 2022, 51, 10898 DOI: 10.1039/D2DT01347A

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