Issue 16, 2018

Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

Abstract

Among two dimensional (2D) van der Waals (vdW) layered materials such as graphene, which is used like a metal, and transition metal chalcogenides (TMdCs), which are used as semiconductors and metals, hexagonal boron nitride (hBN), which is used as an insulator, is ubiquitous as a building block to construct 2D vdW electronics for versatile tunneling devices. Monolayer and few-layer hBN films have been prepared with flake sizes of a few hundred micrometer via mechanical exfoliation and transfer methods. Another approach used to synthesize hBN films on a large scale is chemical vapor deposition (CVD). Although the single-crystal film growth of hBN on the wafer scale is the key to realizing realistic electronic applications, the various functionalities of hBN for 2D electronics are mostly limited to the microscale. Here, we review the recent progress for the large-area synthesis of hBN and other related vdW heterostructures via CVD, and the artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistances. The challenges and future perspectives for practical applications are also addressed.

Graphical abstract: Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

Article information

Article type
Review Article
Submitted
30 5 2018
First published
25 7 2018

Chem. Soc. Rev., 2018,47, 6342-6369

Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

K. K. Kim, H. S. Lee and Y. H. Lee, Chem. Soc. Rev., 2018, 47, 6342 DOI: 10.1039/C8CS00450A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements