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Issue 9, 2015
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Graphene nanomesh photodetector with effective charge tunnelling from quantum dots

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Abstract

Graphene nanomesh (GNM)-based optoelectronics integrated with quantum dots (QDs) are investigated in this article. The charge transfer mechanism in the QDs/GNM interface is probed in four terminal gated FET-type photodetectors. The insulating ligand is used to make the GNM/ligand/QDs vertically behave like a metal/insulate/semiconductor (MIS) structure to facilitate the charge tunnelling. With the current constraint effect of the GNM and the effective charge tunnelling, a high-performance photodetector is fabricated with higher responsivity, higher on/off ratio and shorter response time. The results of our analysis and experimental approach can be extended to future graphene-based photodetectors, as long as suitable ligands and an effective architecture are chosen for this type of device.

Graphical abstract: Graphene nanomesh photodetector with effective charge tunnelling from quantum dots

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Supplementary files

Article information


Submitted
20 11 2014
Accepted
22 1 2015
First published
23 1 2015

Nanoscale, 2015,7, 4242-4249
Article type
Paper
Author version available

Graphene nanomesh photodetector with effective charge tunnelling from quantum dots

X. Liu, N. Liu, M. Liu, Z. Tao, W. Kuang, X. Ji, J. Chen, W. Lei, Q. Dai, C. Li, X. Li and A. Nathan, Nanoscale, 2015, 7, 4242
DOI: 10.1039/C4NR06883A

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