Issue 25, 2015

The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films

Abstract

Herein we report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C60 bis-adduct (ICBA). In particular, the effects of annealing temperature and duration as well as surface functionalization are explored. Electron mobilities approaching 0.1 cm2 V−1 s−1 are reported.

Graphical abstract: The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films

Supplementary files

Article information

Article type
Communication
Submitted
07 1 2015
Accepted
06 2 2015
First published
06 2 2015
This article is Open Access
Creative Commons BY license

Chem. Commun., 2015,51, 5414-5417

Author version available

The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films

E. Orgiu, M. A. Squillaci, W. Rekab, K. Börjesson, F. Liscio, L. Zhang and P. Samorì, Chem. Commun., 2015, 51, 5414 DOI: 10.1039/C5CC00151J

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements