Issue 6, 2018

Bi2OS2: a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states

Abstract

Two-dimensional (2D) semiconductors with desirable band gaps and high carrier mobility are highly sought after for future application in nanoelectronics. Herein, by means of first-principles calculations, we predict that a new 2D material, namely a Bi2OS2 nanosheet, possesses not only a tunable direct band gap, but also ultra-high electron mobility (up to 26 570 cm2 V−1 s−1). More interestingly, an anomalous layer-dependent band gap is revealed, derived from the synergetic effect of the quantum confinement and intrinsic surface electron states. 2D Bi2OS2 also exhibits excellent absorption over the entire solar spectrum and the absorption coefficient is comparable to that of inorganic–organic hybrid perovskite solar cells. Moreover, the Bi2OS2 monolayer maintains good structural integrity up to 1000 K and has a relatively small exfoliation energy from its layered bulk. The excellent electronic and optical properties, together with high stability and great experimental possibility, render 2D Bi2OS2 a promising material for future nanoelectronic and optoelectronic applications.

Graphical abstract: Bi2OS2: a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states

Supplementary files

Article information

Article type
Communication
Submitted
21 8 2018
Accepted
13 9 2018
First published
13 9 2018

Mater. Horiz., 2018,5, 1058-1064

Bi2OS2: a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states

X. Zhang, B. Wang, X. Niu, Y. Li, Y. Chen and J. Wang, Mater. Horiz., 2018, 5, 1058 DOI: 10.1039/C8MH01001C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements