A six-level ferroelectric storage cell based on a bidirectional imprint field

Chaeheon Kim, Junghyeon Hwang, Hunbeom Shin, Jinho Ahn and Sanghun Jeon

J. Mater. Chem. C, 2024, 12, 15188
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Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations

Hongrae Joh, Sangho Lee, Jinho Ahn and Sanghun Jeon

J. Mater. Chem. C, 2024, 12, 15435
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Stabilized negative capacitance for near-theoretical efficiency and high reliability in charge trap flash memory

Sangho Lee, Giuk Kim, Yunseok Nam, Yangjin Jeong, Hyunjun Kang, Woongjin Kim, Hunbeom Shin, Mincheol Shin, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn and Sanghun Jeon

Materials Today Physics, 2025, 58, 101865
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Selective Erase Operation for Multiple Strings of 3D Ferroelectric (Fe)-NAND Flash Memory

Gyunseok Ryu and Myounggon Kang

IEEE Electron Device Lett., 2024, 45, 372
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Positive Interaction Between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor

Hyojun Choi, Giuk Kim, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Do-Hyung Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon

IEEE Electron Device Lett., 2024, 45, 2351
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High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide

Jae Young Kim, Min-Ju Choi, Yoon Jung Lee, Sung Hyuk Park, Sungkyun Choi, Ji Hyun Baek, In Hyuk Im, Seung Ju Kim and Ho Won Jang

ACS Appl. Mater. Interfaces, 2024, 16, 19057
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Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding

Dong Zhang, Jixuan Wu, Qiwen Kong, Zijie Zheng, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Yuye Kang, Gerui Zheng, Jiezhi Chen and Xiao Gong

IEEE Trans. Electron Devices, 2023, 70, 6665
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On the reliability of HfO2-based FeFETs for memory applications

Debojyoti Roy, Khushwant Sehra and Manoj Saxena

Microsyst Technol, 2025
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Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric–Insulator-Si (MFIS) FeFET

Giuk Kim, Hyojun Choi, Sangho Lee, Hunbeom Shin, Sangmok Lee, Yunseok Nam, Hyunjun Kang, Seokjoong Shin, Hoon Kim, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon

IEEE Trans. Electron Devices, 2024, 71, 6627
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Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Giuk Kim, Taeho Kim, Sangho Lee, Junghyeon Hwang, Minhyun Jung, Jinho Ahn and Sanghun Jeon

Jpn. J. Appl. Phys., 2024, 63, 05SP06
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Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

Yeongseok Jeong, Venkateswarlu Gaddam, Youngin Goh, Hunbeom Shin, Sangho Lee, Giuk Kim and Sanghun Jeon

IEEE Trans. Electron Devices, 2023, 70, 354
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Multi-bit nonvolatile memory device based on the reverse polarization under the channel of organic ferroelectric thin-film transistor

Qiusong Chen, Yulan Zhou, Juan E. Sanchez, Dong Lin, Guodong Zhu and Zuhong Xiong

Surface and Coatings Technology, 2025, 509, 132180
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First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics via Inserting AlN Interlayer

Sangmok Lee, Giuk Kim, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Do-Hyung Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon

IEEE Electron Device Lett., 2024, 45, 1578
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Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism

Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Yue Chen, Xiaolin Wang, Yuye Kang, Kaizhen Han, Gan Liu, Zuopu Zhou, Zhilun Zhang, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen and Xiao Gong

IEEE Trans. Electron Devices, 2025, 72, 1788
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Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Ik‐Jyae Kim and Jang‐Sik Lee

Advanced Materials, 2023, 35
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The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory

Myeongsang Yun, Gyuhyeon Lee, Gyunseok Ryu, Hyoungsoo Kim and Myounggon Kang

Electronics, 2024, 13, 316
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Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors

Ik-Jyae Kim and Jang-Sik Lee

Sci. Adv., 2024, 10
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Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation

Kyul Ko, Dae-Hwan Ahn, Jai-Youn Jeong, Byeong-Kwon Ju and Jae-Hoon Han

IEEE Trans. Electron Devices, 2024, 71, 6435
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BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs—Part I: Experimental Results With Boosted Memory Window

Zijie Zheng, Leming Jiao, Dong Zhang, Chen Sun, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni and Xiao Gong

IEEE Trans. Electron Devices, 2024, 71, 1827
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Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation

Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyungju Noh, Tae-Hyeon Kim, Sihyun Kim and Sangwan Kim

Solid-State Electronics, 2024, 216, 108917
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Impact of Zr Precursor on Electrical Characteristics of HfZrO Laminated Structure

Seungwon Go, Hyungju Noh, Dong Keun Lee, Seonggeun Kim, Jae Yeon Park, Unhyun Im, Hojoong Lee, Sihyun Kim and Sangwan Kim

IEEE Electron Device Lett., 2024, 45, 2001
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BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs—Part II: Mechanism With Load Line Analysis and Scaling Strategy

Zijie Zheng, Dong Zhang, Leming Jiao, Chen Sun, Zuopu Zhou, Yue Chen, Qiwen Kong, Xiaolin Wang, Gan Liu, Kai Ni and Xiao Gong

IEEE Trans. Electron Devices, 2024, 71, 5325
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Non-volatile memory characteristics of flexible ferroelectric field-effect transistors consisting of Sm-doped BiFeO3 thin films

Yoonho Ahn and Jong Yeog Son

Ceramics International, 2024, 50, 24881
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Imprinted Antiferroelectric With Low Damage Process for High Performance Negative Capacitance NAND Flash Memory

Sangho Lee, Giuk Kim, Yunseok Nam, Yeongseok Jeong, Taeho Kim, Hunbeom Shin, Sangmok Lee, Jinho Ahn and Sanghun Jeon

IEEE Electron Device Lett., 2025, 46, 572
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Enhanced Reliability and Controllability in Filamentary Oxide‐Based 3D Vertical Structured Resistive Memory with Pulse Scheme Algorithm for Versatile Neuromorphic Applications

Hyesung Na and Sungjun Kim

Adv Funct Materials, 2025, 35
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Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems

Giuk Kim, Sangho Lee, Hyojun Choi, Yangjin Jung, Woongjin Kim, Sanghyun Park, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Mincheol Shin, Jinho Ahn and Sanghun Jeon

Advanced Science, 2025
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Analysis of operation delay and switching speed limitation due to source/drain resistance and subgap density of states in amorphous InGaZnOx/HfZrOx ferroelectric thin-film transistor

Sejun Park, Hyojin Yang, Haesung Kim, Hyunwook Jeong, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim, Min-Kyu Park and Jong-Ho Bae

Solid-State Electronics, 2025, 229, 109203
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HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process

Yixin Qin, Venkateswarlu Gaddam, Taeseung Jung and Sanghun Jeon

IEEE Trans. Electron Devices, 2024, 71, 5618
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Efficient Large Scale Neural Network Acceleration With 3-D FeNOR-Based Computing-in-Memory Design

Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Xiaolin Wang, Yuye Kang, Kaizhen Han, Zuopu Zhou, Leming Jiao, Jixuan Wu, Jiezhi Chen and Xiao Gong

IEEE Trans. Electron Devices, 2025, 72, 2319
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Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

Venkateswarlu Gaddam, Giuk Kim, Taeho Kim, Minhyun Jung, Chaeheon Kim and Sanghun Jeon

ACS Appl. Mater. Interfaces, 2022, 14, 43463
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Low‐Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO2 Ferroelectric FETs

Ryun‐Han Koo, Wonjun Shin, Sangwoo Kim, Jangsaeng Kim, Been Kwak, Jiseong Im, Hyunwoo Kim, Deok‐Hwang Kwon, Suraj S. Cheema, Jong‐Ho Lee and Daewoong Kwon

Advanced Science, 2025, 12
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