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Abstract | Cited by

We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2′,3′-d]furan (DNF–V) derivatives. DNF–V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF–V derivatives showed an excellent carrier mobility of up to 1.3 cm2 V−1 s−1, thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.

Graphical abstract: Furan fused V-shaped organic semiconducting materials with high emission and high mobility

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