Modulation of photoluminescence in a MoS2 device through tuning the quantum tunneling effect
Abstract
Transition metal dichalcogenide (TMD) materials, such as molybdenum disulfide (MoS2), have emerged as promising platforms for exploring electrically tunable light–matter interactions, which are critical for designing high-performance photodetector systems. In this study, we investigate the advancements in quantum tunneling MoS2 field-effect transistors (QT-MoS2 FETs) and their optoelectronic properties, with a focus on photoresponse behavior and photoluminescence (PL) spectral variations driven by photoinduced tunneling currents through oxide layers. The results demonstrate that tunneling-induced exciton and trion dissociation effects lead to a pronounced blue shift in PL spectral peaks and significant changes in light intensity. Compared to normal MoS2 FETs, QT-MoS2 FETs exhibit considerably enhanced PL spectral modulation under applied gate bias, underscoring the critical role of tunneling currents in governing optical responses. This work advances the understanding of 2D material-based optoelectronics and highlights their potential for next-generation photodetector applications.
- This article is part of the themed collection: Celebrating 10 Years of Nanoscale Horizons: 10th Anniversary Collection