Time-resolved nanospectroscopy of III–V semiconductor nanowires

Abstract

We investigate ultrafast electron dynamics in individual GaAs/InGaAs core–shell nanowires using near-infrared pump–mid-infrared probe nanospectroscopy based on a scattering-type scanning near-field technique. Our results reveal a distinct blue shift in plasmon resonance frequency induced by photodoping. By extracting time-dependent electron densities and scattering rates, we gain insights into the effects of chemical doping and nanowire surface states on recombination dynamics and carrier mobility. Varying the pump power over two orders of magnitude reveals carrier recombination times in the range from a few ps at high power to 100 ps at low power, dominated by bimolecular recombination. Our findings highlight the potential of time-resolved nanoscopy for contactless probing of free carrier mobility and recombination dynamics on a local scale in individual semiconductor nanostructures or nanodevices.