Issue 29, 2023

Versatility of group VI layered metal chalcogenide thin films synthesized by solution-based deposition methods

Abstract

Among transition metal dichalcogenides (TMDs), group VI layered metal (Mo and W) dichalcogenides (LMD) have received increased research interest for numerous applications due to their layered structure as well as interesting physicochemical properties that facilitate tunable physical, chemical, electrical and optical properties. These features extend LMDs’ use in energy storage, catalysis, optoelectronics etc. The use of solution-based methods such as the successive ionic layer adsorption and reaction (SILAR), chemical bath deposition (CBD), electrodeposition, and hydrothermal method for the deposition of group VI LMDs over vapor-based methods such as chemical vapor deposition (CVD) and various sputtering techniques allows one to tune the physicochemical properties. With such promising features, solution-based deposited group VI LMDs possess a vast scope for their application in diverse fields. Hence, it is important to underscore the research progress in group VI LMDs and their future scope. The present study focuses on the versatility of solution-based deposited group VI LMDs in diverse fields. In addition, various solution-based deposition methods, different fascinating properties, and a thorough literature review of solution-based deposited group VI LMDs, along with the future scope, are discussed.

Graphical abstract: Versatility of group VI layered metal chalcogenide thin films synthesized by solution-based deposition methods

Article information

Article type
Review Article
Submitted
26 Сәу. 2023
Accepted
01 Шіл. 2023
First published
06 Шіл. 2023

J. Mater. Chem. C, 2023,11, 9768-9786

Versatility of group VI layered metal chalcogenide thin films synthesized by solution-based deposition methods

V. V. Magdum, Y. M. Chitare, S. P. Kulkarni, P. D. Sawant, S. A. Pawar, S. V. Talekar, C. D. Lokhande, U. M. Patil, S. B. Patil and J. L. Gunjakar, J. Mater. Chem. C, 2023, 11, 9768 DOI: 10.1039/D3TC01470C

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