Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

Se Hyun Kim; Geun Taek Yu; Geun Hyeong Park; Dong Hyun Lee; Ju Yong Park; Kun Yang; Eun Been Lee; Je In Lee; Min Hyuk Park

doi:10.1039/D1CC04966F

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Interfacial engineering of a Mo/Hf_0.3Zr_0.7O₂/Si capacitor using the direct scavenging effect of a thin Ti layer†

Se Hyun Kim,

^a Geun Taek Yu,^a Geun Hyeong Park,^a Dong Hyun Lee,

^a Ju Yong Park,^a Kun Yang,^a Eun Been Lee,^a Je In Lee*^a and Min Hyuk Park

*^ab

Author affiliations

* Corresponding authors

^a School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
E-mail: jilee@pnu.ac.kr

^b Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea
E-mail: minhyuk.park@snu.ac.kr

Abstract

An antiferroelectric Mo/Hf_0.3Zr_0.7O₂/SIO_x/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO₂ layer, and the endurance could be enhanced beyond 10⁹ cycles, which is higher than that of the gate stack of ferroelectric field-effect-transistors by 3–4 orders of magnitude.

This article is part of the themed collection: 2021 Emerging Investigators

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Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the …

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Article information

DOI: https://doi.org/10.1039/D1CC04966F
Article type: Communication
Submitted: 03 Қыр. 2021
Accepted: 21 Қаз. 2021
First published: 21 Қаз. 2021

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Chem. Commun., 2021,57, 12452-12455

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Interfacial engineering of a Mo/Hf_0.3Zr_0.7O₂/Si capacitor using the direct scavenging effect of a thin Ti layer

S. H. Kim, G. T. Yu, G. H. Park, D. H. Lee, J. Y. Park, K. Yang, E. B. Lee, J. I. Lee and M. H. Park, Chem. Commun., 2021, 57, 12452 DOI: 10.1039/D1CC04966F

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Chemical Communications