Issue 93, 2021

Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

Abstract

An antiferroelectric Mo/Hf0.3Zr0.7O2/SIOx/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO2 layer, and the endurance could be enhanced beyond 109 cycles, which is higher than that of the gate stack of ferroelectric field-effect-transistors by 3–4 orders of magnitude.

Graphical abstract: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

Associated articles

Supplementary files

Article information

Article type
Communication
Submitted
03 Қыр. 2021
Accepted
21 Қаз. 2021
First published
21 Қаз. 2021

Chem. Commun., 2021,57, 12452-12455

Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

S. H. Kim, G. T. Yu, G. H. Park, D. H. Lee, J. Y. Park, K. Yang, E. B. Lee, J. I. Lee and M. H. Park, Chem. Commun., 2021, 57, 12452 DOI: 10.1039/D1CC04966F

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