Issue 26, 2024

Gate bias modulation towards organic electrochemical transistors with ultra-high cycling stability

Abstract

Organic electrochemical transistors (OECTs) show great potential in next-generation bioelectronics due to their high transconductance, low driving voltage, and biocompatibility. These advantages rely on efficient electrochemical doping/dedoping of the transistor channel consisting of organic mixed ionic–electronic conductors (OMIECs). Nevertheless, during device operation, hydration and electrolyte swelling lead to inferior cycling/operation stability of OECTs when compared with other conventional transistors. To enable further development and commercialization of OECTs, long-term stable operation is mandatory. Here, it is discovered that a slight variation in gate bias (VG) during operation would result in contrasting degradation in OECT performance with a conventional planar structure based on p-type p(g2T-T), which is the result of the alternating consumption of active OMIEC content due to the swelling effect during cycling. The introduction of the vertical architecture along with a crosslinking agent in the channel would largely decelerate/avoid such a process, which could yield an OECT with more than 250 000 full cycles (cycling duration of 10 000 s). Moreover, this strategy can be extended to another n-type OMIEC (Homo-gDPP). This work reveals a unique class of bioelectronics where their lifetime can be managed and controlled by device structure engineering, showing extensive potential in biomedical and bio-implantable functional devices.

Graphical abstract: Gate bias modulation towards organic electrochemical transistors with ultra-high cycling stability

Supplementary files

Article information

Article type
Paper
Submitted
04 Сәу. 2024
Accepted
30 Мам. 2024
First published
30 Мам. 2024

J. Mater. Chem. A, 2024,12, 15753-15761

Gate bias modulation towards organic electrochemical transistors with ultra-high cycling stability

M. Xie, Y. Lai, M. Li, D. Zhao, C. Huang, L. Bai, Y. Cheng, J. Chen, L. Feng and W. Huang, J. Mater. Chem. A, 2024, 12, 15753 DOI: 10.1039/D4TA02276A

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