Efficient and scalable perovskite solar cells achieved by buried interface engineering

Abstract

A high quality buried interface is crucial for highly efficient, stable, and scalable perovskite solar cells, especially for p-i-n structure devices. Here, we report a buried interface engineering strategy by doping tetrachloroaluminate anions into buried organic hole transporting layers, which improves the interfacial wettability of perovskite precursor solution, accelerates hole extraction and transport, and minimizes non-radiative recombination at hole-selective interfaces. The present strategy enables the achievement of p-i-n perovskite solar cells with efficiencies of 23.22% and 21.31% for devices over an area of 0.08 and 1.0 square centimeters, respectively. The target device maintained 93% of initial efficiency under standard illumination at 85 °C for 1500 hours.