Issue 43, 2017
From the journal:

Journal of Materials Chemistry C

Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization†

Hanyu Zhang, ORCID logo a   Jaehoon Ji, ORCID logo a   Adalberto A. Gonzalez ORCID logo a  and  Jong Hyun Choi ORCID logo *a  

* Corresponding authors

a School of Mechanical Engineering, Purdue University, West Lafayette, IN 47907, USA
E-mail: jchoi@purdue.edu

Abstract

We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors. We find that the adsorption of Zn-centred protoporphyrins strongly influences the photocurrent, depending on the relative energy levels of the TMDs against those of the chromophore molecules.

Graphical abstract: Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

  • This article is part of the themed collection: 2D Materials
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Article information

DOI
https://doi.org/10.1039/C7TC02861J
Article type
Communication
Submitted
27 Мау. 2017
Accepted
08 Қыр. 2017
First published
08 Қыр. 2017

J. Mater. Chem. C, 2017,5, 11233-11238

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Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

H. Zhang, J. Ji, A. A. Gonzalez and J. H. Choi, J. Mater. Chem. C, 2017, 5, 11233 DOI: 10.1039/C7TC02861J

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