Issue 11, 2016

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

Abstract

Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore, high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an excellent photoresponsivity of 300 A W−1 under 800 nm light illumination with an external quantum efficiency of 4.65 × 104% and a detectivity of 6 × 109 Jones, as well as fast rise and decay times (τrise = 36 ms and τdecay = 7 ms), suggesting a promising future for the utilization of the SnS nanobelts in practical NIR light sensors.

Graphical abstract: High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

Supplementary files

Article information

Article type
Communication
Submitted
28 Жел. 2015
Accepted
18 Ақп. 2016
First published
19 Ақп. 2016

J. Mater. Chem. C, 2016,4, 2111-2116

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

X. Zhou, L. Gan, Q. Zhang, X. Xiong, H. Li, Z. Zhong, J. Han and T. Zhai, J. Mater. Chem. C, 2016, 4, 2111 DOI: 10.1039/C5TC04410C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements