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The fundamentals and applications of ferroelectric HfO2

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Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing

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Artificial intelligence-driven phase stability evaluation and new dopants identification of hafnium oxide-based ferroelectric materials

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Ferroelectric–Optoelectronic Hybrid System for Photodetection

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Atomic doping of Alumina-based dielectric with high permittivity and breakdown field strength

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Reduced coercive field and enhanced ferroelectric polarization of Hf0.5Zr0.5O2 film through electric-field-assisted rapid annealing

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The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications

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High-Storage, Low-Variability, and Low-Power Read-After-Write Superlattice HfO2/ZrO2 FeFET Memory Device by Using a Multifunctional MoOx/TiON Layer

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Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2 by Optimizing TiN x Interfacial Capping Layer and Its Fatigue Mechanism

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Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

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Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry

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Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation

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Uniform Crystal Formation and Electrical Variability Reduction in Hafnium-Oxide-Based Ferroelectric Memory by Thermal Engineering

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Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

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Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation

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An Overview of Ferroelectric Hafnia and Epitaxial Growth

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Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing

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Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications

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A perspective on the physical scaling down of hafnia-based ferroelectrics

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Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

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Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer

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Visualizing Ferroelectric Uniformity of Hf1–xZrxO2 Films Using X-ray Mapping

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Structural distortion in ferroelectric HfO2 – The factor that determines electric field-induced phase transformation

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Observation of stabilized negative capacitance effect in hafnium-based ferroic films

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Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations

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Special topic on ferroelectricity in hafnium oxide: Materials and devices

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First-principles predictions of HfO2-based ferroelectric superlattices

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A Brief Review on the Ferroelectric Fluorite-Structured Nanolaminate

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Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications

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Engineering phase transition and ferroelectric properties in acceptor-doped HfO2/SrRuO3 thin-film heterostructures by a charge-balance synergistic strategy

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Thermal budget study to simultaneously achieve low-temperature (<400 °C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films

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High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition

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ACS Appl. Electron. Mater., 2022, 4, 1823
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Insights Into Curie‐Temperature and Phase Formation of Ferroelectric Hf1−xZrxO2with Oxygen Defects from a Leveled Energy Landscape

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Strong piezoelectricity of the nm-thick flexible Hf0.5Zr0.5O2 ferroelectric film

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Many routes to ferroelectric HfO2: A review of current deposition methods

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Unlocking the phase evolution of the hidden non-polar to ferroelectric transition in HfO2-based bulk crystals

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Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers

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A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process

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Insights into the ferroelectric orthorhombic phase formation in doped HfO2 thin films

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