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Correction: Plasma enhanced atomic layer deposition of Ga2O3 thin films
Ranjith K.
Ramachandran
a,
Jolien
Dendooven
a,
Jonas
Botterman
b,
Sreeprasanth Pulinthanathu
Sree
c,
Dirk
Poelman
b,
Johan A.
Martens
c,
Hilde
Poelman
d and
Christophe
Detavernier
*a
aDepartment of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium. E-mail: Christophe.detavernier@ugent.be; Fax: +32-9-264-4996; Tel: +32-9-264-4354
bDepartment of Solid State Sciences, LumiLab, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
cCentre for Surface Chemistry and Catalysis, Catholic University of Leuven, Kasteelpark Arenberg 23, B-3001 Leuven, Belgium
dLaboratory for Chemical Technology, Ghent University, Technologiepark 914, B-9052 Zwijnaarde, Belgium
First published on 2nd December 2014
Abstract
Correction for ‘Plasma enhanced atomic layer deposition of Ga2O3 thin films’ by Ranjith K. Ramachandran et al., J. Mater. Chem. A, 2014, 2, 19232–19238.
On the y-axis of Fig. 4, the authors mistyped the unit of thickness as “Å” instead of “nm”. This has now been corrected in the new Fig. 4 provided, as shown.
Fig. 4 Thickness of the Ga2O3 films deposited at 200 °C on SiO2/Si substrates against the number of ALD cycles.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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