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Citations to this article as recorded by CrossRef and RSC Journals (14 citations).

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation
Sengunthar Karthikeyan, Steven W. Johnston, Dhammapriy Gayakwad, Suddhasatta Mahapatra, Robert J. Bodnar, Jing Zhao, Rutwik Joshi and Mantu K. Hudait
Nanoscale, 2024, 16, 7225
DOI: 10.1039/D3NR05904A

Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence
Sengunthar Karthikeyan, Rutwik Joshi, Jing Zhao, Robert J. Bodnar, Brenden A. Magill, Yannick Pleimling, Giti A. Khodaparast and Mantu K. Hudait
J. Mater. Chem. C, 2023, 11, 9472
DOI: 10.1039/D3TC01018J

Impact of defects, buffer-layer thickness, and substrate orientation on the optical properties of epitaxial germanium
Muntasir Mahdi, Nina Hong, Neha Singh and Mantu K. Hudait
Phys. Rev. Applied, 2026, 25
DOI: 10.1103/s26s-23sh

Lattice Matched Germanium-on-AlAs Nanosheet-FETs for More-Moore CMOS
Atif Alam, Anson Trapani, Rebecca Schuette, Eli Levi, Nada Mohamed, Runbo Deng, Rutwik Joshi and Mantu K. Hudait
IEEE Trans. Electron Devices, 2024, 71, 7874
DOI: 10.1109/TED.2024.3471530

High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States
Mantu K. Hudait, Michael B. Clavel, Sengunthar Karthikeyan and Robert J. Bodnar
ACS Appl. Electron. Mater., 2023, 5, 4792
DOI: 10.1021/acsaelm.3c00568

Radiative carrier lifetime in Ge1−xSnx midinfrared emitters
Gérard Daligou, Anis Attiaoui, Simone Assali, Patrick Del Vecchio and Oussama Moutanabbir
Phys. Rev. Applied, 2023, 20
DOI: 10.1103/PhysRevApplied.20.064001

Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2O3
Mantu K. Hudait, Steven W. Johnston, Manash R. Das, Sengunthar Karthikeyan, Partha P. Sahu, Jagat Das, Jing Zhao, Robert J. Bodnar and Rutwik Joshi
ACS Appl. Electron. Mater., 2023, 5, 3350
DOI: 10.1021/acsaelm.3c00383

Magnetron sputtering growth and growth mechanism of GeSn films with Sn content exceeding 25% on InP substrates
Yiliang Diao, Junfeng Yang, Zhanren Wang, Wenhao Meng, Guanzhou Liu, Zhiwei Huang, Jinrong Zhou and Shaoying Ke
Applied Surface Science, 2025, 699, 163122
DOI: 10.1016/j.apsusc.2025.163122

Monolithically Integrated ϵ-Ge/InxGa1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation
Rutwik Joshi, Steve Johnston, Sengunthar Karthikeyan, Luke F. Lester and Mantu K. Hudait
IEEE J. Select. Topics Quantum Electron., 2024, 30, 1
DOI: 10.1109/JSTQE.2023.3323336

Lattice Matched Tunable Wavelength GeSn Quantum Well Laser Architecture: Theoretical Investigation
Rutwik Joshi, Luke F. Lester and Mantu K. Hudait
IEEE J. Select. Topics Quantum Electron., 2025, 31, 1
DOI: 10.1109/JSTQE.2024.3434581

Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement, Strain, Defects, and Transport Properties of Tensile-Strained Ge
Sengunthar Karthikeyan, Rishav Khatiwada, Jean J. Heremans, Steven W. Johnston, Ze Zong, Wei Zhou and Mantu K. Hudait
ACS Appl. Electron. Mater., 2025, 7, 10145
DOI: 10.1021/acsaelm.5c01570

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling
Sengunthar Karthikeyan and Mantu K. Hudait
Journal of Vacuum Science & Technology B, 2024, 42
DOI: 10.1116/6.0003563

Optical constants and critical-point transitions in biaxially tensile-strained epitaxial thin films of germanium
Rutwik Joshi, Nina Hong, Neha Singh, Muntasir Mahdi and Mantu K. Hudait
Phys. Rev. Applied, 2025, 23
DOI: 10.1103/PhysRevApplied.23.024037

Defects in Ge and GeSn and their impact on optoelectronic properties
Andrea Giunto and Anna Fontcuberta i Morral
Applied Physics Reviews, 2024, 11
DOI: 10.1063/5.0218623