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Citations to this article as recorded by CrossRef and RSC Journals (11 citations).

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Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
A. Ardenghi, O. Bierwagen, J. Lähnemann, E. Luna, J. Kler, A. Falkenstein, M. Martin, A. Sacchi and P. Mazzolini
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Demonstration of Bixbyite-Structured δ-Ga2O3 Thin Films Using β-Fe2O3 Buffer Layers by Mist Chemical Vapor Deposition
Takahiro Kato, Hiroyuki Nishinaka, Kazuki Shimazoe, Kazutaka Kanegae and Masahiro Yoshimoto
ACS Appl. Electron. Mater., 2023, 5, 1715
DOI: 10.1021/acsaelm.2c01750

TEM characterization of defects in κ-(In x Ga1−x )2O3 thin film grown on (001) FZ-grown ε-GaFeO3 substrate by mist CVD
Osamu Ueda, Hiroyuki Nishinaka, Noriaki Ikenaga, Noriyuki Hasuike and Masahiro Yoshimoto
Jpn. J. Appl. Phys., 2023, 62, 125501
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Defect formation and modification of optical properties in β-Ga2O3 via carbon ion irradiation
Zhuoyu Li, Linan Ma, Yuzhi Zhao, Qingyu Cai, Zhongxiao Man, Shengqiang Zhou, Yong Liu and Yang Tan
Opt. Express, 2025, 33, 33955
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Temperature-dependent vapor-phase nucleation and surface migration in CVD-grown β-Ga2O3 epilayers on 4H-SiC substrate
Yunkai Li, Moyu Wei, Jingyi Jiao, Yicheng Pei, Yuyang Wang, Hanyu Zhao, Guoguo Yan and Xingfang Liu
Vacuum, 2025, 241, 114643
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Phase engineering of κ-Ga2O3 heteroepitaxy on LiNbO3 by strain competition effect
Songhao Gu, Mei Cui, Rongming Yin, Fang-Fang Ren, Shulin Gu, Rong Zhang and Jiandong Ye
Applied Physics Letters, 2025, 127
DOI: 10.1063/5.0283790