Toward High-Performance AlGaN-Based UV-B LEDs: Engineering of the Strain Relaxation Process

Chenshu Liu, Jianxun Liu, Yingnan Huang, Xiujian Sun, Qian Sun, Meixin Feng, Qiming Xu, Yanwei Shen and Hui Yang

Crystal Growth & Design, 2024, 24, 3672
DOI: 10.1021/acs.cgd.3c01459

Design and Optimization of Epitaxial and Chip Structures in AlGaN-Based Deep-Ultraviolet LEDs: Toward Enhanced Efficiency and Reliability

Yifang Chen, Quanjiang Lv, Tianpeng Yang, Tingting Mi, Xiaowen Wang and Junlin Liu

ACS Photonics, 2026, 13, 878
DOI: 10.1021/acsphotonics.5c02187

Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging

Shizhao Fan, Rong Liu, Yingnan Huang, Jianxun Liu, Xiaoning Zhan, Xiujian Sun, Meixin Feng, Yuhao Yin, Qian Sun and Hui Yang

Journal of Applied Physics, 2022, 132
DOI: 10.1063/5.0102373

A review on GaN-based two-terminal devices grown on Si substrates

Yu Zhang, Chao Liu, Min Zhu, Yuliang Zhang and Xinbo Zou

Journal of Alloys and Compounds, 2021, 869, 159214
DOI: 10.1016/j.jallcom.2021.159214

Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer

Qihua Zhang, Heemal Parimoo, Eli Martel and Songrui Zhao

Sci Rep, 2022, 12
DOI: 10.1038/s41598-022-11246-0

Improved external quantum efficiency of deep UV LEDs with an ultra-thin AlGaN last quantum barrier by controlling the desorption-kinetics process

Xiujian Sun, Jianxun Liu, Yingnan Huang, Chenshu Liu, Xiaoning Zhan, Hongwei Gao, Qian Sun, Qiming Xu and Hui Yang

Appl. Phys. Express, 2023, 16, 111004
DOI: 10.35848/1882-0786/ad0ada

Juntong Chen, Jianxun Liu, Yingnan Huang, Ruisen Liu, Yayu Dai, Leming Tang, Zheng Chen, Xiujian Sun, Chenshu Liu, Shuming Zhang, Qian Sun, Meixin Feng, Qiming Xu and Hui Yang

Nanomaterials, 2023, 13, 1562
DOI: 10.3390/nano13091562

Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate

Qihua Zhang, Xue Yin, Eli Martel and Songrui Zhao

Materials Science in Semiconductor Processing, 2021, 135, 106099
DOI: 10.1016/j.mssp.2021.106099

Vertical AlGaN Deep Ultraviolet Light Emitting Diodes with Polarization Enhanced p-AlGaN Epilayer on Si Substrate

Qihua Zhang, Heemal Parimoo, Eli Martel, Xue Yin and Songrui Zhao

ECS J. Solid State Sci. Technol., 2022, 11, 066003
DOI: 10.1149/2162-8777/ac7663

AlGaN-based Schottky barrier deep ultraviolet photodetector grown on Si substrate

Fangzhou Liang, Meixin Feng, Yingnan Huang, Xiujian Sun, Xiaoning Zhan, Jianxun Liu, Qian Sun, Rongxin Wang, Xiaotian Ge, Jiqiang Ning and Hui Yang

Opt. Express, 2020, 28, 17188
DOI: 10.1364/OE.389767

III-nitride semiconductor lasers grown on Si

Meixin Feng, Jianxun Liu, Qian Sun and Hui Yang

Progress in Quantum Electronics, 2021, 77, 100323
DOI: 10.1016/j.pquantelec.2021.100323

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

Xiaoning Zhan, Jianxun Liu, Xiujian Sun, Yingnan Huang, Hongwei Gao, Yu Zhou, Qian Li, Qian Sun and Hui Yang

J. Phys. D: Appl. Phys., 2023, 56, 015104
DOI: 10.1088/1361-6463/ac9fdf

High Internal Quantum Efficiency AlGaN Epilayer Grown by Molecular Beam Epitaxy on Si Substrate

Xue Yin and Songrui Zhao

ECS J. Solid State Sci. Technol., 2021, 10, 076001
DOI: 10.1149/2162-8777/ac0f15

High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth

Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Hongwei Gao, Meixin Feng, Yu Zhou and Hui Yang

Crystals, 2023, 13, 454
DOI: 10.3390/cryst13030454

Molecular Beam Epitaxy of AlGaN Epilayers on Si for Vertical Deep Ultraviolet Light-Emitting Diodes

Qihua Zhang, Heemal Parimoo, Eli Martel and Songrui Zhao

ECS J. Solid State Sci. Technol., 2022, 11, 116002
DOI: 10.1149/2162-8777/aca2d9