Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (112̄2) GaN templates

Zhengyuan Wu, Shiqiang Lu, Peng Yang, Pengfei Tian, Laigui Hu, Ran Liu, Junyong Kang and Zhilai Fang

CrystEngComm, 2019, 21, 244
DOI: 10.1039/C8CE01648H

Xiaochan Li, Wenliang Wang, Yulin Zheng, Yuan Li, Liegen Huang, Zhiting Lin, Yuefeng Yu and Guoqiang Li

CrystEngComm, 2018, 20, 1198
DOI: 10.1039/C7CE02121F

Growth behavior of ammonothermal GaN crystals grown on non-polar and semi-polar HVPE GaN seeds

Tengkun Li, Guoqiang Ren, Xujun Su, Jingjing Yao, Zixiang Yan, Xiaodong Gao and Ke Xu

CrystEngComm, 2019, 21, 4874
DOI: 10.1039/C9CE00806C

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (112̄2) GaN templates and their correlations

Zhengyuan Wu, Tienmo Shih, Jinchai Li, Pengfei Tian, Ran Liu, Junyong Kang and Zhilai Fang

CrystEngComm, 2018, 20, 2053
DOI: 10.1039/C8CE00151K

Photoelectrochemical water-splitting using GaN pyramidal dots and their long-term stability in the two-electrode configuration

Sangmoon Han, Siyun Noh, Jaehyeok Shin, Yeon-Tae Yu, In-Seok Seo and Jin Soo Kim

J. Mater. Chem. A, 2022, 10, 10355
DOI: 10.1039/D2TA01361D

Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template

Abdullah Haaziq Ahmad Makinudin, Al-Zuhairi Omar, Afiq Anuar, Ahmad Shuhaimi Abu Bakar, Steven P. DenBaars and Azzuliani Supangat

Crystal Growth & Design, 2019, 19, 6092
DOI: 10.1021/acs.cgd.9b00206

S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties

P.V. Seredin, N.S. Buylov, D.L. Goloshchapov, S.A. Ivkov, E.P. Matyukhina, I.N. Arsentyev, A.V. Nashchekin, Sh.Sh. Sharofidinov, A.M. Mizerov, E.V. Pirogov and M.S. Sobolev

Optical Materials, 2022, 129, 112507
DOI: 10.1016/j.optmat.2022.112507

The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures

Gary Tan, Ahmad Shuhaimi Abu Bakar, Chong Seng Ooi, Omar Al-Zuhairi, Yew Hoong Wong and Wan Haliza Abd. Majid

Materials Science and Engineering: B, 2023, 291, 116368
DOI: 10.1016/j.mseb.2023.116368

High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE

Vishnu Aggarwal, Rahul Kumar, Urvashi Varshney, Sudhanshu Gautam, Bipul Kumar Pradhan, Brajesh S. Yadav, Sandeep Sharma, Ramakrishnan Ganesan, Govind Gupta, Muthusamy Senthil Kumar and Sunil Singh Kushvaha

Sensors and Actuators A: Physical, 2024, 368, 115103
DOI: 10.1016/j.sna.2024.115103

InGaN/GaN quantum well improved byin situSiNxpretreatment of GaN template

Demeng Huang, Zhengyuan Wu and Zhilai Fang

Phys. Status Solidi A, 2016, 213, 3130
DOI: 10.1002/pssa.201600157

In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Zhengyuan Wu, Pengyu Song, Tienmo Shih, Linna Pang, Li Chen, Guangyang Lin, Dingqu Lin, Cheng Li, Ran Liu, Wenzhong Shen, Junyong Kang and Zhilai Fang

Crystal Growth & Design, 2017, 17, 4687
DOI: 10.1021/acs.cgd.7b00584

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

Al-Zuhairi Omar, Ahmad Shuhaimi Bin Abu Bakar, Abdullah Haaziq Ahmad Makinudin, Muhammad Imran Mustafa Abdul Khudus, Adreen Azman, Anas Kamarundzaman and Azzuliani Supangat

Superlattices and Microstructures, 2018, 117, 207
DOI: 10.1016/j.spmi.2018.03.038

Phosphor-free white emission from InGaN quantum wells grown on in situ formed submicron-scale multifaceted GaN stripes

Xiyang Shen, Zhengyuan Wu, Jinchai Li, Junyong Kang and Zhilai Fang

Journal of Alloys and Compounds, 2019, 775, 752
DOI: 10.1016/j.jallcom.2018.09.293

(AlxGa1-x)2O3-based materials: Growth, properties, and device applications

Haojie Li, Zhengyuan Wu, Siyu Wu, Pengfei Tian and Zhilai Fang

Journal of Alloys and Compounds, 2023, 960, 170671
DOI: 10.1016/j.jallcom.2023.170671

Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films

Z.Y. Wu, Z.X. Jiang, C.C. Ma, W. Ruan, Y. Chen, H. Zhang, G.Q. Zhang, Z.L. Fang, J.Y. Kang and T.-Y. Zhang

Materials Today Physics, 2021, 17, 100356
DOI: 10.1016/j.mtphys.2021.100356

Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE

P.V. Seredin, D.L. Goloshchapov, D.E. Kostomakha, Y.A. Peshkov, N.S. Buylov, S.A. Ivkov, A.M. Mizerov, S.N. Timoshnev, M.S. Sobolev, E.V. Ubyivovk and V.I. Zemlyakov

Optical Materials, 2024, 152, 115471
DOI: 10.1016/j.optmat.2024.115471

Semipolar (112¯2) GaN Films Improved by in situ SiNx Pretreatment of m‐Sapphire Substrate Surface

Zhengyuan Wu, Zhuoxun Jiang, Shiqiang Lu, Jinchai Li, Ran Liu, Junyong Kang and Zhilai Fang

Physica Status Solidi (a), 2019, 216
DOI: 10.1002/pssa.201900001

Recent progress of Ga2O3-based gas sensors

Hongchao Zhai, Zhengyuan Wu and Zhilai Fang

Ceramics International, 2022, 48, 24213
DOI: 10.1016/j.ceramint.2022.06.066

Mass-Transfer Enhancement in the CO2 Oxidative Dehydrogenation of Propane over GaN Supported on Zeolite Nanosheets with a Short b-Axis and Hierarchical Pores

Zhan-Jun Zhu, Zhen-Hong He, Yue Tian, Sen-Wang Wang, Yong-Chang Sun, Kuan Wang, Weitao Wang, Zhi-Fang Zhang, Jiajie Liu and Zhao-Tie Liu

ACS Catal., 2024, 14, 10376
DOI: 10.1021/acscatal.4c02599

Influence of high-energy helium ions on the characteristics of GaN epilayers with different n-type doping levels, grown on GaN-MOCVD/c-Al2O3 templates by PA MBE

P.V. Seredin, D.L. Goloshchapov, D.E. Kostomakha, Y.A. Peshkov, N.S. Buylov, A.M. Mizerov, S.N. Timoshnev, M.S. Sobolev and A.V. Nashchekin

Surfaces and Interfaces, 2025, 72, 107275
DOI: 10.1016/j.surfin.2025.107275

Enhanced indium adsorption and surface evolution of semi-polar (11–22) LED via a strain periodic alternating superlattice (SPAS-L)

Al-Zuhairi Omar, Abdullah Haaziq Ahmad Makinudin, Ahmad Shuhaimi, Afiq Anuar, Anas Kamarudzaman, Najwa Surani and Azzuliani Supangat

Materials Today Communications, 2021, 27, 102441
DOI: 10.1016/j.mtcomm.2021.102441