Issue 33, 2020

Enhanced carrier transport by transition metal doping in WS2 field effect transistors

Abstract

High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal–semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a “generalized” Cu doping by using randomly distributed Cu atoms along the channel and (ii) a “localized” Cu doping by adapting an ultrathin Cu layer at the metal–semiconductor interface. Compared to the pristine WS2 FETs, both the generalized Cu atomic dopant and localized Cu contact decoration can provide a Schottky-to-Ohmic contact transition owing to the reduced contact resistances by 1–3 orders of magnitude, and consequently elevate electron mobilities by 5–7 times. Our work demonstrates that the introduction of transition metal can be an efficient and reliable technique to enhance the carrier transport and device performance in 2D TMD FETs.

Graphical abstract: Enhanced carrier transport by transition metal doping in WS2 field effect transistors

Supplementary files

Article information

Article type
Paper
Submitted
24 2 2020
Accepted
13 4 2020
First published
14 4 2020

Nanoscale, 2020,12, 17253-17264

Author version available

Enhanced carrier transport by transition metal doping in WS2 field effect transistors

M. Liu, S. Wei, S. Shahi, H. N. Jaiswal, P. Paletti, S. Fathipour, M. Remškar, J. Jiao, W. Hwang, F. Yao and H. Li, Nanoscale, 2020, 12, 17253 DOI: 10.1039/D0NR01573C

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