Issue 21, 2014

Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

Abstract

A metal–organic monolayer–semiconductor junction, exhibiting a diode behaviour, was constructed on a hydrogen-terminated n-type Si(111) by sequential surface reactions of (1) formation of an organic monolayer with a thiol terminal group, (2) platinum deposition onto the thiol group via adsorption of a platinum complex followed by chemical reduction, and finally (3) continuous Ag layer formation by electroless deposition. Rectifying behaviour was observed at this interface.

Graphical abstract: Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

Supplementary files

Article information

Article type
Paper
Submitted
31 10 2013
Accepted
10 1 2014
First published
28 1 2014

Phys. Chem. Chem. Phys., 2014,16, 9960-9965

Construction of a metal–organic monolayer–semiconductor junction on a hydrogen-terminated Si(111) surface via Si–C covalent linkage and its electrical properties

K. Uosaki, H. Fukumitsu, T. Masuda and D. Qu, Phys. Chem. Chem. Phys., 2014, 16, 9960 DOI: 10.1039/C3CP54619E

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