Issue 7, 2022

Solution-processed broadband photodetectors without transparent conductive oxide electrodes

Abstract

Broadband photodetectors (PDs) have great applications in both industrial and scientific sectors. In this study, solution-processed broadband PDs with an “inverted” vertical photodiode device structure without incorporating transparent conductive oxides electrodes, fabricated by bulk heterojunction (BHJ) composites composed of a low optical gap conjugated polymer blended with highly electrically conductive PbS quantum dots (QDs), operated at room temperature, are reported. The low optical gap conjugated polymer incorporated with PbS QDs contributes to the spectral response from the ultraviolet (UV)-visible to the infrared (IR) range. To realize the IR spectral response and to circumvent the weak IR transparency of the transparent oxide electrodes, the implementation of a photodiode with an “inverted” vertical device structure with the Au anode and the Ba/Al bilayer semitransparent cathode passivated with the MgF2 layer is demonstrated. Photoinduced charge carrier transfer occurring within the BHJ composite gave rise to decent photocurrent, resulting in detectivities greater than 1012 Jones (cm Hz1/2/W) over the wavelength from the UV-visible to the IR range under low applied bias. Thus, our findings of the utilization of the BHJ composites and an “inverted” vertical photodiode without the incorporation of the transparent conductive oxide electrodes provide a facile way to realize broadband PDs.

Graphical abstract: Solution-processed broadband photodetectors without transparent conductive oxide electrodes

Article information

Article type
Paper
Submitted
08 9 2021
Accepted
09 11 2021
First published
09 11 2021

J. Mater. Chem. C, 2022,10, 2783-2791

Author version available

Solution-processed broadband photodetectors without transparent conductive oxide electrodes

L. Sheng, C. Yi, L. Zheng, Y. Liu, J. Zheng and X. Gong, J. Mater. Chem. C, 2022, 10, 2783 DOI: 10.1039/D1TC04278E

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