Issue 30, 2012

Recent advances in high mobility donor–acceptor semiconducting polymers

Abstract

A combination of improved understanding of molecular design criteria and polymer purification techniques, as well as optimised fabrication techniques and device surface treatments, have driven recent advances in the performance of semiconducting polymers for transistor applications. This development has allowed polymer-based devices to reach parity with the best values obtained for small molecule evaporated devices. Herein, we present the most recent work on solution processable high mobility donor–acceptor type polymers. We discuss the approaches that have been taken to improve both hole (and electron) mobility further. We will not only focus on chemical design criteria, but also describe certain processing approaches which have led to impressive hole mobilities of up to 5.5 cm2 V−1 s−1.

Graphical abstract: Recent advances in high mobility donor–acceptor semiconducting polymers

Article information

Article type
Highlight
Submitted
28 3 2012
Accepted
18 5 2012
First published
31 5 2012

J. Mater. Chem., 2012,22, 14803-14813

Recent advances in high mobility donor–acceptor semiconducting polymers

L. Biniek, B. C. Schroeder, C. B. Nielsen and I. McCulloch, J. Mater. Chem., 2012, 22, 14803 DOI: 10.1039/C2JM31943H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements