Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain‐Jong Li and Yee Sin Ang

InfoMat, 2026, 8
DOI: 10.1002/inf2.70096

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Mengshi Dai, Lianmeng Yu, Xiaobo Feng, Qianjin Wang and Xin He

Surfaces and Interfaces, 2025, 56, 105608
DOI: 10.1016/j.surfin.2024.105608

Flexoelectric effects in a bent α−In2Se3 ferroelectric monolayer

Hongli Chen, Chen Hu, Li Chen, Liyuan Chen, Kai Jiang, Liangqing Zhu, Liyan Shang, Yawei Li, Junhao Chu, Shijing Gong and Zhigao Hu

Phys. Rev. B, 2024, 110
DOI: 10.1103/PhysRevB.110.014102

Interface Engineering and Electric Contact Design of van der Waals Goldene/As2C3 Heterostructure for Flexible Electronics

Chuong V. Nguyen, Pham T. Truong, Le M. Duc, Huynh V. Phuc, Nguyen V. Hieu, Tran P. T. Linh, Nguyen T. Hiep, Cuong Q. Nguyen and Nguyen N. Hieu

Langmuir, 2025, 41, 21768
DOI: 10.1021/acs.langmuir.5c02779

Simulation Studies on Robust Contacts in V2CT2/MoSi2N4 (T═O, F, OH) van der Waals Heterojunction Nanostructures: Implications for Optoelectronic Devices

Xin He, Zhen Gao, Zhenhua Zhang, Kai Xiong and Yao He

ACS Appl. Nano Mater., 2023, 6, 18337
DOI: 10.1021/acsanm.3c03597

Tunable Schottky barriers and magnetoelectric coupling driven by ferroelectric polarization reversal of MnI3/In2Se3 multiferroic heterostructures

Tao Zhang, Hao Guo, Jiao Shen, Ying Liang, Haidong Fan, Wentao Jiang, Qingyuan Wang and Xiaobao Tian

npj Comput Mater, 2024, 10
DOI: 10.1038/s41524-024-01429-w

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Wei-Kang Zhang, Yue-Hong Liu, Hang He, Guang-Ping Zhang, Zong-Liang Li, Chuan-Kui Wang and Xiao-Xiao Fu

Chinese Journal of Physics, 2024, 92, 1283
DOI: 10.1016/j.cjph.2024.10.038

Self-Powered Pure Spin Photocurrent in Bent CrSBr Monolayer

Hongli Chen, Li Chen, Liyuan Chen, Liyan Shang, Yawei Li, Liangqing Zhu, Junhao Chu, Shijing Gong and Zhigao Hu

Phys. Rev. Lett., 2025, 134
DOI: 10.1103/s8qn-n8tr

Bidirectional ohmic contact in MXene_C3N2 heterostructures enabled by hydrogen atom incorporation and hydrogen-bond

Qiong Chen, Xinyu Xie, Dongqing Zou, Wenkai Zhao, Yuqing Xu, Feng Gao, Yuliang Liu and Chuanlu Yang

Carbon, 2026, 247, 121055
DOI: 10.1016/j.carbon.2025.121055

Rationally Designed Versatile Heterostructures Consisted of Two-Dimensional Goldene and MXene Sc2CF2

Chuong V. Nguyen, Pham Thiet Truong, Huynh V. Phuc, Cuong Q. Nguyen, Nguyen T. Hiep and Nguyen N. Hieu

Nano Lett., 2025, 25, 10673
DOI: 10.1021/acs.nanolett.5c02560

Robust Ohmic Contact in Monolayer ZrI2 Coupled with Cold Metal

Bo Huang, Xiaohui Deng, Zhen-Kun Tang and Liemao Cao

J. Phys. Chem. C, 2025, 129, 13776
DOI: 10.1021/acs.jpcc.5c02913

Modulation of contact types and Schottky barrier in Ti3C2T2/TiSi2N4 (T = O or OH) van der Waals heterostructures by biaxial strain and external electric field

Zijian Zhang, Jiahui Wang, Zheng Dai, Mingyi Zhang, Li Niu and Lina Bai

Chemical Physics, 2023, 573, 111996
DOI: 10.1016/j.chemphys.2023.111996

The van der Waals MoSi2N4 materials family

Tianya Zhou, Chuan Xu and Wencai Ren

Nat Rev Mater, 2025, 10, 907
DOI: 10.1038/s41578-025-00832-z

Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts

Wen Ai, Yongfei Shi, Xiaohui Hu, Jian Yang and Litao Sun

ACS Appl. Electron. Mater., 2023, 5, 5606
DOI: 10.1021/acsaelm.3c00922

Hydrogen bonding-driven Ohmic contact in Sc2CT2 (T=H, F, OH) based field-effect transistors

Jiaxiang Li, Zihao Xu, Yu Shu, Yinggan Zhang, Zhou Cui, Jiansen Wen, Cuilian Wen, Bo Wu and Baisheng Sa

APL Electronic Devices, 2025, 1
DOI: 10.1063/5.0295449

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Che Chen Tho, San-Dong Guo, Shi-Jun Liang, Wee Liat Ong, Chit Siong Lau, Liemao Cao, Guangzhao Wang and Yee Sin Ang

Applied Physics Reviews, 2023, 10
DOI: 10.1063/5.0156988