Issue 47, 2021

Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides

Abstract

Two-dimensional (2D) vertical heterostructures (HSs) constructed via vertically stacking two or more 2D transition-metal dichalcogenide (TMDC) materials have been intensively studied over the past several years. However, it is still a great challenge to realize the controllable fabrication of 2D TMDC vertical HSs via the “bottom-up” growth strategy, which is regarded as a crucial step toward further performance study and device applications. So far, chemical vapor deposition (CVD) has been reported to be a feasible approach to achieve high controllability in the growth of various 2D materials, which has promoted the in-depth study of the CVD growth of 2D TMDC vertical HSs. In this review, we first introduce the fundamental properties as well as the diverse preparation strategies of various 2D TMDC-based vertical HSs. Major attention is paid to the controllable CVD growth of multitudinous 2D TMDC vertical HSs. This review highlights recent advances in the controllable growth of 2D TMDC vertical HSs via utilizing four main strategies during the CVD procedure, including the synthesis step, effect of growth temperature, precursor design, and substrate engineering. Finally, we discuss the major challenges and prospects in this rapidly advancing field of research.

Graphical abstract: Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides

Article information

Article type
Highlight
Submitted
24 set 2021
Accepted
02 nov 2021
First published
03 nov 2021

CrystEngComm, 2021,23, 8239-8254

Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides

X. Jiang, F. Chen, S. Zhao and W. Su, CrystEngComm, 2021, 23, 8239 DOI: 10.1039/D1CE01289D

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