Rui Duan, Wencai Peng, Jianshu Zhang and Jinli Zhang
RSC Adv., 2023,13, 7877-7885
Abstract
Using metal chlorides (WCl6, MoCl5) as the chlorine source, the conversion rate of chlorodimethylsilane is much higher than that of trichlorosilane.
Mao Peng, Jia Ren, Wei Li, Chenliang Ye and Jinli Zhang
Phys. Chem. Chem. Phys., 2025,27, 15566-15573
Abstract
In the production of polysilicon, the various orientations of silicon crystal planes lead to Si vacancy and interface formation.
Brock E. Leland, Joydeb Mondal and Ryan J. Trovitch
Chem. Commun., 2023,59, 3665-3684
Abstract
Aminosilanes have been broadly and sustainably prepared through the dehydrocoupling of amines and silanes with heterogeneous and homogeneous catalysts that span the periodic table.
Botao Song, Bing Gao, Sheng Liu, Yan Zhao and Fang Dong
New J. Chem., 2025,49, 5901-5919
Abstract
Surface reaction mechanisms of species from the MTS-H2 gas-phase system with 4H-SiC surface sites.
Sen Gao, Juyeon Seo, Sanghyun Hong, Jianlin Li, Peiyun Feng, Ji Young Byun and Yung Joon Jung
J. Mater. Chem. C, 2023,11, 5102-5109
Abstract
We investigated the key chemical vapor etching parameters governing the morphology of Si nanowires. Highly aligned sub-5 nm Si nanowires can be achieved by controlling the oxidant gas concentration, reaction temperature, and hydrogen concentration.