Unveiling interfacial dead layer in wurtzite ferroelectrics

Jinlin Wang, Yun-Qin Li, Rui Wang, Qi Liu, Haotian Ye, Ping Wang, Xifan Xu, Huaiyuan Yang, Fang Liu, Bowen Sheng, Liuyun Yang, Xiaoyang Yin, Yi Tong, Tao Wang, Wen-Yi Tong, Xin-Zheng Li, Chun-Gang Duan, Bo Shen and Xinqiang Wang

Nat Commun, 2025, 16
DOI: 10.1038/s41467-025-61291-2

Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study

Oliver Rehm, Lutz Baumgarten, Roberto Guido, Pia Maria Düring, Andrei Gloskovskii, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder and Martina Müller

Physica Rapid Research Ltrs, 2025, 19
DOI: 10.1002/pssr.202400307

Impact of Scaling Thickness on the Ferroelectric Properties of Pt/Al₀.₈Sc₀.₂N/Pt Capacitors

Xiaoxi Li, Yuan Fang, Jiuren Zhou, Bochang Li, Zhifan Wu, Cizhe Fang, Xiangyu Zeng, Siying Zheng, Wei Mao, Yue Hao, Yan Liu and Genquan Han

IEEE Trans. Electron Devices, 2025, 72, 370
DOI: 10.1109/TED.2024.3506513

Aluminum Scandium Nitride as a Functional Material at 1000 °C

Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X.‐L. Feng, Mark Sheplak and Roozbeh Tabrizian

Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202400849

Lattice-matched multiple channel AlScN/GaN heterostructures

Thai-Son Nguyen, Naomi Pieczulewski, Chandrashekhar Savant, Joshua J. P. Cooper, Joseph Casamento, Rachel S. Goldman, David A. Muller, Huili G. Xing and Debdeep Jena

APL Materials, 2024, 12
DOI: 10.1063/5.0216133

Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements

Luyi Wang, Jinhong Cheng, Ke Qu, Qingfeng Zhu, Bobo Tian and Zhenzhong Yang

Inorganics, 2025, 13, 29
DOI: 10.3390/inorganics13020029

A pressure sensitive silicon field effect transistor comprising a buffer-free piezoelectric Al0.72Sc0.28N layer

Rafael Ashkrizzadeh, Ole Gronenberg, Adrian Petraru, Georg Schönweger, Erik Mackensen, Henning Hanssen, Lorenz Kienle and Hermann Kohlstedt

Thin Solid Films, 2025, 809, 140590
DOI: 10.1016/j.tsf.2024.140590

Enhancing Reliability in Ferroelectric ScAlN Non-Volatile Memory With AlOₓ Layer Insertion

Rui Wang, Ping Wang, Haotian Ye, Ran Feng, Xifan Xu, Bingxuan An, Yuzhi Deng, Fang Liu, Bowen Sheng, Tao Wang, Xiantong Zheng, Bo Shen and Xinqiang Wang

IEEE Electron Device Lett., 2025, 46, 1107
DOI: 10.1109/LED.2025.3563098

Ultra-high energy storage performance of field-induced ferroelectric Al2O3-inserted Hf0.5Zr0.5O2 thin films for electrostatic supercapacitors

Jonghoon Shin, Dong Hoon Shin, Haengha Seo, Kyung Do Kim, Seungheon Choi, Tae Kyun Kim, Heewon Paik, Haewon Song, Seungyong Byun, In Soo Lee and Cheol Seong Hwang

Energy Storage Materials, 2025, 79, 104306
DOI: 10.1016/j.ensm.2025.104306

Unraveling Fatigue Mechanisms in Ferroelectric AlScN Films: The Role of Oxygen Infiltration

Ruiqing Wang, Jiuren Zhou, Danyang Yao, Siying Zheng, Bochang Li, Xiaoxi Li, Yan Liu, Yue Hao and Genquan Han

IEEE Electron Device Lett., 2025, 46, 381
DOI: 10.1109/LED.2024.3522947

Polarity-dependent fatigue behavior of domain switching kinetics in textured ferroelectric Al0.72Sc0.28N thin films

Tae Yoon Lee, Jung Woo Cho, Hong Heon Lim, Chihwan An, Seung Hyup Lee and Seung Chul Chae

Journal of Alloys and Compounds, 2025, 1034, 181305
DOI: 10.1016/j.jallcom.2025.181305

Effects of Residual Stress on the Ferroelectric Properties of Al0.8Sc0.2N Films Sandwiched Between Pt or W Electrodes

Xiaoxi Li, Yuan Fang, Bochang Li, Jiuren Zhou, Zhifan Wu, Cizhe Fang, Xiangyu Zeng, Siying Zheng, Yue Hao, Yan Liu and Genquan Han

IEEE Trans. Electron Devices, 2025, 72, 1774
DOI: 10.1109/TED.2025.3545391

Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics

Roberto Guido, Xuetao Wang, Bohan Xu, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder and Patrick D. Lomenzo

ACS Appl. Mater. Interfaces, 2024, 16, 42415
DOI: 10.1021/acsami.4c05798

Polarization and domains in wurtzite ferroelectrics: Fundamentals and applications

Simon Fichtner, Georg Schönweger, Cheng-Wei Lee, Keisuke Yazawa, Prashun Gorai and Geoff L. Brennecka

Applied Physics Reviews, 2025, 12
DOI: 10.1063/5.0249265

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Haiming Qin, Nan He, Cong Han, Miaocheng Zhang, Yu Wang, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Yi Liu, Xinpeng Wang and Yi Tong

Nanomaterials, 2024, 14, 986
DOI: 10.3390/nano14110986

High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Takayoshi Katase, Tomoyuki Koganezawa, Tomotaka Nakatani, Rosantha Kumara, Osami Sakata and Hiroshi Funakubo

Applied Physics Letters, 2024, 125
DOI: 10.1063/5.0202063

Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors

Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Haidong Lu, Alexei Gruverman and Hiroshi Funakubo

APL Materials, 2025, 13
DOI: 10.1063/5.0268889