Bismuth/tin-based artificial interface for overcoming the anode passivation of rechargeable magnesium batteries

Abstract

A bimetallic Bi/Sn artificial interface layer is constructed on an Mg anode via displacement reaction to address passivation challenges in ether-based electrolytes. Compared to the nucleation overpotential of Mg (–3.21 V), that of the fabricated BiSn@Mg is lower (0.098 V), and its deposition overpotential is below 0.21 V. The BiSn@Mg//BiSn@Mg cell can run stably for 4000 h with a good rate capability. The constructed artificial interface enhances Mg/electrolyte compatibility and reaction kinetics. This work advances reversible Mg plating/stripping in ether-based electrolytes.

Graphical abstract: Bismuth/tin-based artificial interface for overcoming the anode passivation of rechargeable magnesium batteries

Supplementary files

Article information

Article type
Communication
Submitted
28 gen 2025
Accepted
07 lug 2025
First published
10 lug 2025

Chem. Commun., 2025, Advance Article

Bismuth/tin-based artificial interface for overcoming the anode passivation of rechargeable magnesium batteries

X. Hou, J. Guan, B. Wu, C. Yi, S. Wang, G. Wang, H. Yang, M. Liu, M. Chen, D. Yu, L. Gan and X. Zhou, Chem. Commun., 2025, Advance Article , DOI: 10.1039/D5CC00460H

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