Bismuth Selenide Topological Insulator Materials for Green Energy Devices: Prospects and Applications

Abstract

Bismuth selenide topological insulator material emerged as prototype three-dimensional topological insulator and have been the center of attention for the new generation related devices. Theoretical and experimental characterization of underlying physical phenomena together with proper evaluation of the current picture is essential to design, foresee and engineer Bi2Se3 for important realized device applications. Furthermore, these and presented characterization methodologies can be adopted for similar three-dimensional topological insulator counterpart materials such as bismuth telluride and antimony selenide. Herein, we summarize recent research advancements on bismuth selenide both theoretically and experimentally and drawing a perspective for future applications i.e. in spintronic and quantum computing devices as well as other green energy based scientific accomplishments. Different synthesis methods, physical properties and occurrence of quantum mechanical phenomena, and calculations, device applications and characterization methods implemented for bismuth selenide so far are classified and comprehensively reviewed. Future prospects addressing the challenges and opportunities are highlighted at the end.