High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore, high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an excellent photoresponsivity of 300 A W⁻¹ under 800 nm light illumination with an external quantum efficiency of 4.65 × 10⁴% and a detectivity of 6 × 10⁹ Jones, as well as fast rise and decay times (τ_rise = 36 ms and τ_decay = 7 ms), suggesting a promising future for the utilization of the SnS nanobelts in practical NIR light sensors.