Wenliang
Li
ab,
QianLing
Liu
ab,
Jun
Tan
ab,
Guangze
He
ab,
Yingmin
Wang
cd,
Zhenhua
Sun
ab,
Baikui
Li
ab and
Honglei
Wu
*ab
aState Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China. E-mail: hlwu@szu.edu.cn
bKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
cThe 46th Research Institute, China Electronics Technology Group Corporation, Tianjin, 300220, China
dKey Laboratory of Advanced Semiconductor Materials of CTEC, Tianjin, 300220, China
First published on 17th June 2025
Correction for ‘Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation’ by Wenliang Li et al., CrystEngComm, 2025, 27, 3219–3228, https://doi.org/10.1039/D5CE00214A.
Furthermore, the caption for Fig. 6 contained an error in the description of panels b and c. The correct caption for Fig. 6 is shown below.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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