Open Access Article
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Van der Waals heterostructure of graphene and germanane: tuning the ohmic contact by electrostatic gating and mechanical strain
A.
Bafekry
*a,
S.
Karbasizadeh
b,
M.
Faraji
c,
A. Bagheri
Khatibani
d,
I. Abdolhosseini
Sarsari
b,
D.
Gogova
e and
M.
Ghergherehchi
*f
aDepartment of Radiation Application, Shahid Beheshti University, 19839 69411 Tehran, Iran. E-mail: bafekry.asad@gmail.com
bDepartment of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran
cTOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey
dNano Research Lab, Lahijan Branch, Islamic Azad University, 1616, Lahijan, Iran
eDepartment of Physics, Chemistry and Biology, Linkoping University, 58183, Linköping, Sweden
fDepartment of Electrical and Computer Engineering, Sungkyunkwan University, 16419, Suwon, Korea. E-mail: mitragh@skku.edu
First published on 6th October 2021
Abstract
Correction for ‘Van der Waals heterostructure of graphene and germanane: tuning the ohmic contact by electrostatic gating and mechanical strain’ by A. Bafekry et al., Phys. Chem. Chem. Phys., 2021, DOI: 10.1039/D1CP03632G.
The authors would like to correct addresses ‘e’ and ‘f’ in the affiliation list as these were incorrectly swapped in the published article. The corrected affiliations for this paper are as shown below.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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