Open Access Article
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Correction: High throughput first-principles calculations of bixbyite oxides for TCO applications
Nasrin
Sarmadian
*a,
Rolando
Saniz
a,
Bart
Partoens
a,
Dirk
Lamoen
b,
Kalpana
Volety
c,
Guido
Huyberechts
c and
Johan
Paul
c
aCMT, Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium. E-mail: nasrin.sarmadian@uantwerpen.be; Fax: +32-3-2653542; Tel: +32-3-2653439
bEMAT, Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium. Fax: +32-3-2653542; Tel: +32-3-2653439
cFlamac, a division of SIM, Technologiepark 903, 9052 Zwijnaarde, Belgium
First published on 1st December 2014
Abstract
Correction for ‘High throughput first-principles calculations of bixbyite oxides for TCO applications’ by Nasrin Sarmadian et al., Phys. Chem. Chem. Phys., 2014, 16, 17724–17733.
In all our calculations with the hybrid functional HSE06 the default value of 0.25 for the amount of exact exchange was adjusted to 0.325 in order to reproduce the experimentally available fundamental band gap of In2O3.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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