Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses

Yujue Yang, Nengjie Huo and Jingbo Li

J. Mater. Chem. C, 2017, 5, 7051
DOI: 10.1039/C7TC01806A

High thermoelectric performance of two-dimensional SiPGaS/As heterostructures

Ismail Shahid, Xu Hu, Iqtidar Ahmad, Anwar Ali, Nasir Shehzad, Sheraz Ahmad and Zhen Zhou

Nanoscale, 2023, 15, 7302
DOI: 10.1039/D3NR00316G

Significant improvement in thermoelectric performance of SnSe/SnS via nano-heterostructures

Renqi Zhang, Zizhen Zhou, Qi Yao, Ning Qi and Zhiquan Chen

Phys. Chem. Chem. Phys., 2021, 23, 3794
DOI: 10.1039/D0CP05548D

Breaking symmetry in device design for self-driven 2D material based photodetectors

Qi Wang, Changjian Zhou and Yang Chai

Nanoscale, 2020, 12, 8109
DOI: 10.1039/D0NR01326A

Atomically thin p–n junctions based on two-dimensional materials

Riccardo Frisenda, Aday J. Molina-Mendoza, Thomas Mueller, Andres Castellanos-Gomez and Herre S. J. van der Zant

Chem. Soc. Rev., 2018, 47, 3339
DOI: 10.1039/C7CS00880E

Enhance near infrared performance of n-type vertically aligned MoS2 flakes photodetector with active p-type CZTS electrodes

Abhay V Agrawal and Mukesh Kumar

Mater. Res. Express, 2019, 6, 115011
DOI: 10.1088/2053-1591/ab4496

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction

Yufeng Shan, Ziwei Yin, Yi Zhang, Changyi Pan, Huiyong Deng and Ning Dai

ACS Appl. Mater. Interfaces, 2021, 13, 54194
DOI: 10.1021/acsami.1c16891

Transparent ultrathin all-two-dimensional lateral Gr:WS2:Gr photodetector arrays on flexible substrates and their strain induced failure mechanisms

M.E.P. Tweedie, C.S. Lau, L. Hou, X. Wang, Y. Sheng and J.H. Warner

Materials Today Advances, 2020, 6, 100067
DOI: 10.1016/j.mtadv.2020.100067

Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN

Swanand V Solanke, Shashwat Rathkanthiwar, Anisha Kalra, Roop Kumar Mech, Muralidharan Rangarajan, Srinivasan Raghavan and Digbijoy N Nath

Semicond. Sci. Technol., 2019, 34, 075020
DOI: 10.1088/1361-6641/ab2094

2D Photovoltaic Devices: Progress and Prospects

Lin Wang, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen, Xin Huang and Kah‐Wee Ang

Small Methods, 2018, 2
DOI: 10.1002/smtd.201700294

A photoelectrochemical sensing strategy based on single-layer MoS2 modified electrode for methionine detection

Yanxin Li, Shuyu Mei, Sumin Liu and Xu Hun

Journal of Pharmaceutical and Biomedical Analysis, 2019, 165, 94
DOI: 10.1016/j.jpba.2018.11.059

Nature of carrier injection in metal/2D-semiconductor interface and its implications for the limits of contact resistance

Divya Somvanshi, Sangeeth Kallatt, Chenniappan Venkatesh, Smitha Nair, Garima Gupta, John Kiran Anthony, Debjani Karmakar and Kausik Majumdar

Phys. Rev. B, 2017, 96
DOI: 10.1103/PhysRevB.96.205423

The superconducting properties of a Pb/MoTe 2 /Pb heterostructure: First-principles calculations within the anisotropic Migdal–Eliashberg theory

Wei Xia, Jie Zhang and Gui-Qin Huang

Chinese Phys. B, 2018, 27, 126302
DOI: 10.1088/1674-1056/27/12/126302

Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

Xia Wei, Fa-Guang Yan, Chao Shen, Quan-Shan Lv and Kai-You Wang

Chinese Phys. B, 2017, 26, 038504
DOI: 10.1088/1674-1056/26/3/038504

Layer-engineered I-V characteristics of p-Si/WS2 Van der Waals Heterostructure diode

Sanni Kapatel, C. K. Sumesh, Pratik Pataniya, G. K. Solanki and K. D. Patel

Eur. Phys. J. Plus, 2017, 132
DOI: 10.1140/epjp/i2017-11480-2

Fano resonance-enhanced Si/MoS2 photodetector

Tianxun Gong, Boyuan Yan, Taiping Zhang, Wen Huang, Yuhao He, Xiaoyu Xu, Song Sun and Xiaosheng Zhang

Photon. Res., 2023, 11, 2159
DOI: 10.1364/PRJ.500883

Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity

Sangeeth Kallatt, Smitha Nair and Kausik Majumdar

Small, 2018, 14
DOI: 10.1002/smll.201702066

Giant photothermoelectric effect in silicon nanoribbon photodetectors

Wei Dai, Weikang Liu, Jian Yang, Chao Xu, Alessandro Alabastri, Chang Liu, Peter Nordlander, Zhiqiang Guan and Hongxing Xu

Light Sci Appl, 2020, 9
DOI: 10.1038/s41377-020-00364-x

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Muhammad Hussain, Sikandar Aftab, Syed Hassan Abbas Jaffery, Asif Ali, Sajjad Hussain, Dinh Nguyen Cong, Raheel Akhtar, Yongho Seo, Jonghwa Eom, Praveen Gautam, Hwayong Noh and Jongwan Jung

Sci Rep, 2020, 10
DOI: 10.1038/s41598-020-66263-8

Photothermoelectric Effects and Large Photovoltages in Plasmonic Au Nanowires with Nanogaps

Pavlo Zolotavin, Charlotte Evans and Douglas Natelson

J. Phys. Chem. Lett., 2017, 8, 1739
DOI: 10.1021/acs.jpclett.7b00507

Single Crystal Growth and Nano-Structure Study in a Topological Dirac Metal, CoTe2-δ

Lei Chen, Weiyao Zhao and Ren-Kui Zheng

Crystals, 2023, 14, 46
DOI: 10.3390/cryst14010046

Distinct Optoelectronic Signatures for Charge Transfer and Energy Transfer in Quantum Dot–MoS2 Hybrid Photodetectors Revealed by Photocurrent Imaging Microscopy

Mingxing Li, Jia‐Shiang Chen, Prahlad K. Routh, Percy Zahl, Chang‐Yong Nam and Mircea Cotlet

Adv Funct Materials, 2018, 28
DOI: 10.1002/adfm.201707558

Tuning the Photoresponse of Nano‐Heterojunction: Pressure‐Induced Inverse Photoconductance in Functionalized WO3 Nanocuboids

Saqib Rahman, Sudeshna Samanta, Alexei Kuzmin, Daniel Errandonea, Hajra Saqib, Dale L. Brewe, Jaeyong Kim, Junling Lu and Lin Wang

Advanced Science, 2019, 6
DOI: 10.1002/advs.201901132

High-Performance Photodetectors Using a 2D MoS2/3D-AlN Structure

Xinke Liu, Jiangliu Luo, Yuheng Lin, Zhichen Lin, Xiao Liu, Jinlan He, Wenjie Yu, Qiang Liu, Tongbo Wei, Jiankun Yang, Wenjing Zhang and Jun Guo

ACS Appl. Electron. Mater., 2021, 3, 5415
DOI: 10.1021/acsaelm.1c00882

Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung and Geun Young Yeom

Nat Commun, 2019, 10
DOI: 10.1038/s41467-019-12592-w

Substrate effects in high gain, low operating voltage SnSe2photoconductor

Murali Krishna, Sangeeth Kallatt and Kausik Majumdar

Nanotechnology, 2018, 29, 035205
DOI: 10.1088/1361-6528/aa9b18

Laser etching of 2D materials with single-layer precision up to ten layers

Yikun Yao, Xinjia Zhao, Xiangqian Tang, Jianmei Li, Xinyan Shan and Xinghua Lu

Journal of Laser Applications, 2022, 34
DOI: 10.2351/7.0000848

Highly Stable Zero-Dimensional Lead-Free Metal Halides for X-ray Imaging

Joo Hyeong Han, Tuhin Samanta, Yong Min Park, Ha Jun Kim, Noolu Srinivasa Manikanta Viswanath, Hyeon Woo Kim, Bo Kyung Cha, Sung Beom Cho and Won Bin Im

ACS Energy Lett., 2023, 8, 545
DOI: 10.1021/acsenergylett.2c02469

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode

Lin Wang, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen and Kah‐Wee Ang

Adv Elect Materials, 2018, 4
DOI: 10.1002/aelm.201700442

Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition

Ankur Goswami, Priyesh Dhandaria, Soupitak Pal, Ryan McGee, Faheem Khan, Željka Antić, Ravi Gaikwad, Kovur Prashanthi and Thomas Thundat

Nano Res., 2017, 10, 3571
DOI: 10.1007/s12274-017-1568-5

Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2Vertical Heterojunction

Krishna Murali and Kausik Majumdar

IEEE Trans. Electron Devices, 2018, 65, 4141
DOI: 10.1109/TED.2018.2864250

Atomic‐Scale Fabrication of In‐Plane Heterojunctions of Few‐Layer MoS2 via In Situ Scanning Transmission Electron Microscopy

Kuo‐Lun Tai, Chun‐Wei Huang, Ren‐Fong Cai, Guan‐Min Huang, Yi‐Tang Tseng, Jun Chen and Wen‐Wei Wu

Small, 2020, 16
DOI: 10.1002/smll.201905516

Optoelectronic memory in 2D MoS2 field effect transistor

Arun Kumar, Enver Faella, Ofelia Durante, Filippo Giubileo, Aniello Pelella, Loredana Viscardi, Kimberly Intonti, Stephan Sleziona, Marika Schleberger and Antonio Di Bartolomeo

Journal of Physics and Chemistry of Solids, 2023, 179, 111406
DOI: 10.1016/j.jpcs.2023.111406