Ultra-high discharged energy density capacitor using high aspect ratio Na0.5Bi0.5TiO3 nanofibers

Hang Luo, James Roscow, Xuefan Zhou, Sheng Chen, Xianghui Han, Kechao Zhou, Dou Zhang and Chris R. Bowen

J. Mater. Chem. A, 2017, 5, 7091
DOI: 10.1039/C7TA00136C

Hf0.5Zr0.5O2/HfO2/Hf0.5Zr0.5O2 laminated thin films and CF4 plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistors

Kyungsoo Park, Chulwon Chung, Boncheol Ku, Seunghyeon Yun, Junhyeok Park and Changhwan Choi

Nanoscale, 2025, 17, 5689
DOI: 10.1039/D4NR04592K

Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Min Hyuk Park, Dong Hyun Lee, Kun Yang, Ju-Yong Park, Geun Taek Yu, Hyeon Woo Park, Monica Materano, Terence Mittmann, Patrick D. Lomenzo, Thomas Mikolajick, Uwe Schroeder and Cheol Seong Hwang

J. Mater. Chem. C, 2020, 8, 10526
DOI: 10.1039/D0TC01695K

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

Fei Huang, Xing Chen, Xiao Liang, Jun Qin, Yan Zhang, Taixing Huang, Zhuo Wang, Bo Peng, Peiheng Zhou, Haipeng Lu, Li Zhang, Longjiang Deng, Ming Liu, Qi Liu, He Tian and Lei Bi

Phys. Chem. Chem. Phys., 2017, 19, 3486
DOI: 10.1039/C6CP07501K

Ferroelectric and field-induced ferroelectric phase formation in atomic-layer-deposited ZrO2 thin films with TiN electrodes

Jae Hee Song, Kyung Do Kim, Jonghoon Shin, Seong Jae Shin, Suk Hyun Lee, Seung Yong Byun, In Soo Lee, Han Sol Park, Yeon Jae Kim, Hyun Woo Nam and Cheol Seong Hwang

J. Mater. Chem. C, 2025, 13, 14751
DOI: 10.1039/D5TC01449B

Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties

Bong Ho Kim, Song-hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Dae-Myeong Geum, Seung-Hyub Baek and Sang Hyeon Kim

Nanoscale Adv., 2022, 4, 4114
DOI: 10.1039/D2NA00533F

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Ampattu R. Jayakrishnan, Ji S. Kim, Markus Hellenbrand, Luís S. Marques, Judith L. MacManus-Driscoll and José P. B. Silva

Mater. Horiz., 2024, 11, 2355
DOI: 10.1039/D4MH00153B

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Jike Lyu, Tingfeng Song, Ignasi Fina and Florencio Sánchez

Nanoscale, 2020, 12, 11280
DOI: 10.1039/D0NR02204G

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2thin films

Min Hyuk Park, Han Joon Kim, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun and Cheol Seong Hwang

Nanoscale, 2016, 8, 13898
DOI: 10.1039/C5NR08346J

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

K. D. Kim, M. H. Park, H. J. Kim, Y. J. Kim, T. Moon, Y. H. Lee, S. D. Hyun, T. Gwon and C. S. Hwang

J. Mater. Chem. C, 2016, 4, 6864
DOI: 10.1039/C6TC02003H

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun and Cheol Seong Hwang

Nanoscale, 2016, 8, 1383
DOI: 10.1039/C5NR05339K

Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics

Zheng Wang, Jae Hur, Nujhat Tasneem, Winston Chern, Shimeng Yu and Asif Khan

Sci Rep, 2021, 11
DOI: 10.1038/s41598-021-91492-w

Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors

Tae Won Park, Jiwon Moon, Dong Hoon Shin, Hae Jin Kim, Seung Soo Kim, Jea Min Cho, Hyungjun Park, Kyung Seok Woo, Dong Yun Kim, Sunwoo Cheong, Haewon Song, Jong Hoon Shin, Soo Hyung Lee, Néstor Ghenzi and Cheol Seong Hwang

ACS Appl. Mater. Interfaces, 2024, 16, 65046
DOI: 10.1021/acsami.4c15598

Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films

Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Raul Solanas, Ignasi Fina and Florencio Sánchez

ACS Appl. Electron. Mater., 2020, 2, 3221
DOI: 10.1021/acsaelm.0c00560

Depolarization Field Controllable HfZrOx-Based Ferroelectric Capacitors for Physical Reservoir Computing System

Euncho Seo, Eunjin Lim, Jio Shin and Sungjun Kim

ACS Appl. Mater. Interfaces, 2025, 17, 21401
DOI: 10.1021/acsami.5c00213

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

Min Hyuk Park, Han Joon Kim, Gwangyeop Lee, Jaehong Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyun Woo Park, Hye Jung Chang, Jung-Hae Choi and Cheol Seong Hwang

Applied Physics Reviews, 2019, 6
DOI: 10.1063/1.5118737

Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry

Hyojun Choi, Yong Hyeon Cho, Se Hyun Kim, Kun Yang and Min Hyuk Park

J. Phys. Chem. Lett., 2024, 15, 983
DOI: 10.1021/acs.jpclett.3c03363

Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Claudia Richter, Tony Schenk, Min Hyuk Park, Franziska A. Tscharntke, Everett D. Grimley, James M. LeBeau, Chuanzhen Zhou, Chris M. Fancher, Jacob L. Jones, Thomas Mikolajick and Uwe Schroeder

Adv Elect Materials, 2017, 3
DOI: 10.1002/aelm.201700131

Enhanced Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Film via Synergistic Stress-Interface Effects from a W Top Electrode

Dao Wang, Yan Zhang, Fan Xu, Xin-Yuan Wang, Zi-Hao Lu, Hui-Wen Fu and Dan-Feng He

J. Electron. Mater., 2026
DOI: 10.1007/s11664-026-12815-z

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction

Luca Carpentieri, Thomas Mikolajick and Stefan Slesazeck

ACS Appl. Electron. Mater., 2025, 7, 5008
DOI: 10.1021/acsaelm.5c00469

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

Taeho Kim, Jinsung Park, Byoung-Ho Cheong and Sanghun Jeon

Applied Physics Letters, 2018, 112
DOI: 10.1063/1.5003369

A perspective on the physical scaling down of hafnia-based ferroelectrics

Ju Yong Park, Dong Hyun Lee, Geun Hyeong Park, Jaewook Lee, Younghwan Lee and Min Hyuk Park

Nanotechnology, 2023, 34, 202001
DOI: 10.1088/1361-6528/acb945

Enhancing the ferroelectric performance of Hf0.5Zr0.5O2 films by optimizing the incorporation of Al dopant

Xin Liu, Weidong Zhao, Jiawei Wang, Lulu Yao, Man Ding and Yonghong Cheng

Nanotechnology, 2025, 36, 135704
DOI: 10.1088/1361-6528/adaf2c

Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2

S. Starschich, S. Menzel and U. Böttger

Journal of Applied Physics, 2017, 121
DOI: 10.1063/1.4981893

Root cause of read after delay in ferroelectric memories

Diqing Su, Shaorui Li, Xiao Wang, Yannan Xu, Qingting Ding, Heng Zhang and Hangbing Lyu

Chip, 2025, 4, 100139
DOI: 10.1016/j.chip.2025.100139

Achieving Morphotropic Phase Boundary at Extremely Low-Temperature (200 °C) in HZO (>10 nm) Films Using Microwave Annealing

Taeseung Jung, Hunbeom Shin, Jinho Ahn and Sanghun Jeon

IEEE Trans. Electron Devices, 2025, 72, 3076
DOI: 10.1109/TED.2025.3560925

Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films

S. W. Smith, A. R. Kitahara, M. A. Rodriguez, M. D. Henry, M. T. Brumbach and J. F. Ihlefeld

Applied Physics Letters, 2017, 110
DOI: 10.1063/1.4976519

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun and Cheol Seong Hwang

Applied Physics Letters, 2015, 107
DOI: 10.1063/1.4935588

Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation

Si-Meng Chen, Hirofumi Nishida, Sung-Lin Tsai, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Edward Yi Chang and Kuniyuki Kakushima

IEEE Electron Device Lett., 2024, 45, 2090
DOI: 10.1109/LED.2024.3453111

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Franz Fengler, Uwe Schroeder and Cheol Seong Hwang

ACS Appl. Mater. Interfaces, 2016, 8, 15466
DOI: 10.1021/acsami.6b03586

Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS

Jehyun An, Beomjoo Ham, Giryun Hong, Jongseo Park, Bohyeon Kang, Jaeseong Pyo, Sung-Min Ahn and Rock-Hyun Baek

Sci Rep, 2025, 15
DOI: 10.1038/s41598-025-02281-8

Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films

Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun Hyeong Park, Jin Ju Ryu, Je In Lee, Gun Hwan Kim and Min Hyuk Park

Acta Materialia, 2022, 222, 117405
DOI: 10.1016/j.actamat.2021.117405

High-density, nonvolatile SRAM using monolithic 3D integration of InGaZnO thin-film transistors and Hf0.5Zr0.5O2-based ferroelectric capacitors

Qihan Liu, Yu Li, Liwei Liu, Hao Jiang, Haozhe Zhu, Zexing Chen, Yang Yang, Mengwei Si, Can Li, Peng Lin, Yingfen Wei and Qi Liu

Device, 2025, 3, 100833
DOI: 10.1016/j.device.2025.100833

Modulating the microscopic lattice distortions through the Al-rich layers for boosting the ferroelectricity in Al:HfO2 nanofilms

Lulu Yao, Sambit Das, Xin Liu, Kai Wu, Yonghong Cheng, Vikram Gavini and Bing Xiao

J. Phys. D: Appl. Phys., 2022, 55, 455501
DOI: 10.1088/1361-6463/ac8f55

Kinetic Understanding of Field-Induced Phase Transition from Tetragonal to Ferroelectric Orthorhombic Phase in Ferroelectric CeO2–HfO2–ZrO2 Films

Kohei Shimonosono, Yoshiki Maekawa, Nachi Chaya, Kazuki Okamoto, Wakiko Yamaoka, Yasushi Kawashima, Yukari Inoue, Pochun Hsieh, Akash Saha, Albert Suceava, Sankalpa Hazra, Hiroko Yokota, Venkatraman Gopalan and Hiroshi Funakubo

ACS Appl. Electron. Mater., 2025, 7, 6273
DOI: 10.1021/acsaelm.5c00262

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

Baek Su Kim, Seung Dam Hyun, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeon Woo Park, Yong Bin Lee, Jangho Roh, Beom Yong Kim, Ho Hyun Kim, Min Hyuk Park and Cheol Seong Hwang

Nanoscale Res Lett, 2020, 15
DOI: 10.1186/s11671-020-03301-4

Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film

Boncheol Ku, Yue Ma, Hoonhee Han, Wang Xuan and Changhwan Choi

Nanotechnology, 2022, 33, 425205
DOI: 10.1088/1361-6528/ac7cf7

HfO2-based ferroelectrics: From enhancing performance, material design, to applications

Haiyan Chen, Xuefan Zhou, Lin Tang, Yonghong Chen, Hang Luo, Xi Yuan, Chris R. Bowen and Dou Zhang

Applied Physics Reviews, 2022, 9
DOI: 10.1063/5.0066607

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Nannan Liu, Chunlai Luo, Hongdi Wu, Yecheng Ding, Xubing Lu, Zhibo Yan, Jun-Ming Liu and Guoliang Yuan

Applied Physics Letters, 2024, 124
DOI: 10.1063/5.0207501

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Jingjing Wang, Dayu Zhou, Wei Dong, Yifan Yao, Nana Sun, Faizan Ali, Xiaoduo Hou and Feng Liu

Adv Elect Materials, 2021, 7
DOI: 10.1002/aelm.202000585

Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes

Alexis Payne, H. Alex Hsain, Younghwan Lee, Nicholas A. Strnad, Jacob L. Jones and Brendan Hanrahan

Applied Physics Letters, 2022, 120
DOI: 10.1063/5.0083656

Microstructural, surface and interface properties of zirconium doped HfO2 thin films grown by RF co-sputtering technique

K.C. Das, N. Tripathy, S.P. Ghosh, P. Sharma, R. Singhal and J.P. Kar

Vacuum, 2017, 143, 288
DOI: 10.1016/j.vacuum.2017.06.022

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

Shuyu Wu, Rongrong Cao, Hao Jiang, Yu Li, Xumeng Zhang, Yang Yang, Yan Wang, Yingfen Wei and Qi Liu

J. Semicond., 2024, 45, 032301
DOI: 10.1088/1674-4926/45/3/032301

From Ferroelectric Material Optimization to Neuromorphic Devices

Thomas Mikolajick, Min Hyuk Park, Laura Begon‐Lours and Stefan Slesazeck

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202206042

A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films

Shucheng Zhang, Yu Li, Yingfen Wei, Yize Sun, Xumeng Zhang, Hao Jiang and Qi Liu

IEEE Trans. Electron Devices, 2024, 71, 6706
DOI: 10.1109/TED.2024.3465465

Two-Inch Y-Doped Hf0.5Zr0.5O2 Ferroelectric Films Fabricated by Chemical Solution Deposition

Tingting Jia, Pengcheng Xiao, Yi Gong, Xinde Wang, Rui Li, Yujie Long, Hongyang Zhao, Quansheng Guo and Zhenxiang Cheng

ACS Appl. Electron. Mater., 2025, 7, 10701
DOI: 10.1021/acsaelm.5c01813

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device

Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang and Hyunsang Hwang

Nanotechnology, 2021, 32, 315712
DOI: 10.1088/1361-6528/abfb9a

A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O2 films with uniform polarization and high Curie temperature

Yankun Wang, Qiang Wang, Jinyan Zhao, Tore Niermann, Yangyang Liu, Liyan Dai, Kun Zheng, Yanxiao Sun, Yijun Zhang, Jutta Schwarzkopf, Thomas Schroeder, Zhuangde Jiang, Wei Ren and Gang Niu

Applied Materials Today, 2022, 29, 101587
DOI: 10.1016/j.apmt.2022.101587

Effects of Polarization Behavior on Wake‐Up and Fatigue of Hafnium‐Based Ferroelectric Thin Films

Fuling Wu, Zhaobo Liu, Huiting Sui, Lixun Feng, Shibing Xiao, Wenqi Sun, Xiaofang Liu, Shujun Zhang, Houbing Huang and Huajun Sun

Small Methods, 2025, 9
DOI: 10.1002/smtd.202500865

Reliable high-temperature ferroelectric memories based on Hf0.5Zr0.5O2 film

Nannan Liu, Yuanyang Liu, Hongdi Wu, Jiaquan Fang, Wenbin Tang, Xubing Lu, Zhibo Yan, Jun-Ming Liu and Guoliang Yuan

Ceramics International, 2025, 51, 19138
DOI: 10.1016/j.ceramint.2025.02.092

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

Anna G. Chernikova, Maxim G. Kozodaev, Dmitry V. Negrov, Evgeny V. Korostylev, Min Hyuk Park, Uwe Schroeder, Cheol Seong Hwang and Andrey M. Markeev

ACS Appl. Mater. Interfaces, 2018, 10, 2701
DOI: 10.1021/acsami.7b15110

Direct comparison of ferroelectric properties in Hf0.5Zr0.5O2 between thermal and plasma-enhanced atomic layer deposition

Jae Hur, Nujhat Tasneem, Gihun Choe, Panni Wang, Zheng Wang, Asif Islam Khan and Shimeng Yu

Nanotechnology, 2020, 31, 505707
DOI: 10.1088/1361-6528/aba5b7

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

S. Starschich, S. Menzel and U. Böttger

Applied Physics Letters, 2016, 108
DOI: 10.1063/1.4940370

Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoNx Electrodes via TiN Passivation for DRAM Cell Capacitor Applications

Wangu Kang, Ji Sang Ahn, Jae Hyeon Lee, Byung Joon Choi and Jeong Hwan Han

ACS Appl. Mater. Interfaces, 2024, 16, 57446
DOI: 10.1021/acsami.4c14077

Ferroelectric yttrium doped hafnium oxide films from all-inorganic aqueous precursor solution

Xuexia Wang, Dayu Zhou, Shuaidong Li, Xiaohua Liu, Peng Zhao, Nana Sun, Faizan Ali and Jingjing Wang

Ceramics International, 2018, 44, 13867
DOI: 10.1016/j.ceramint.2018.04.233

Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

Ignasi Fina and Florencio Sánchez

ACS Appl. Electron. Mater., 2021, 3, 1530
DOI: 10.1021/acsaelm.1c00110

Investigation of Coercive Field Shift During Cycling in HfZrOₓ Ferroelectric Capacitors

Puyang Cai, Hao Li, Zhiwei Liu, Tianxiang Zhu, Min Zeng, Zhigang Ji, Yanqing Wu, Andrea Padovani, Luca Larcher, Milan Pešić, Runsheng Wang and Ru Huang

IEEE Trans. Electron Devices, 2022, 69, 2384
DOI: 10.1109/TED.2022.3161894

Investigation of fatigue behavior of Pb(Zr0.45Ti0.55)O3 thin films under asymmetric polarization switching

Hui Zhu, Yueyuan Chen, Daping Chu, Shiwei Feng, Yingqiao Zhang and Pengfei Wang

Jpn. J. Appl. Phys., 2016, 55, 091501
DOI: 10.7567/JJAP.55.091501

Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode

Yue Li, Tianyang Feng, Tangyou Sun, Yonghe Chen, Fabi Zhang, Tao Fu, Peihua Wangyang, Haiou Li and Xingpeng Liu

J Mater Sci: Mater Electron, 2022, 33, 23341
DOI: 10.1007/s10854-022-09096-7

Reduced Leakage and Enhanced Endurance via an ITO Oxygen Reservoir Layer in HZO Ferroelectric Capacitors

Haevin Choi, Hyeonjung Park, Changwoo Han, Myeongjae Choi, Yejoo Choi and Changhwan Shin

IEEE Electron Device Lett., 2026, 47, 724
DOI: 10.1109/LED.2026.3664503

Toward Highly Pure Ferroelectric Hf1–xZrxO2 Thin Films by Tailoring the Strain in an Unstable Thermodynamic System

Yu-Cheng Kao, Hao-Kai Peng, Yu-Kai Wang, Kuo-An Wu, Chiao-Yen Wang, Yi-Dong Lin, Ting-Chieh Lai, Yung-Hsien Wu, Chiung-Yuan Lin, Sheng-Wei Hsiao, Ming-Hsien Lee and Pin-Jiun Wu

ACS Appl. Electron. Mater., 2022, 4, 3897
DOI: 10.1021/acsaelm.2c00558

Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

Ruo-Yin Liao, Hsuan-Han Chen, Ping-Yu Lin, Ting-An Liang, Kuan-Hung Su, I-Cheng Lin, Chen-Hao Wen, Wu-Ching Chou, Hsiao-Hsuan Hsu and Chun-Hu Cheng

Materials, 2023, 16, 3306
DOI: 10.3390/ma16093306

Review and perspective on ferroelectric HfO2-based thin films for memory applications

Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder and Cheol Seong Hwang

MRS Communications, 2018, 8, 795
DOI: 10.1557/mrc.2018.175

Hydrogen defects in HfO2: impacts on ferroelectricity and leakage

Tao Yu, Binjian Zeng, Qiong Yang, Shuaizhi Zheng, Yichun Zhou and Min Liao

Computational Materials Science, 2025, 260, 114219
DOI: 10.1016/j.commatsci.2025.114219

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

S. Lancaster, T. Mikolajick and S. Slesazeck

Applied Physics Letters, 2022, 120
DOI: 10.1063/5.0078106

Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting

Yu-Hsuan Yeh, Wen-Chung Chen, Ting-Chang Chang, Yung-Fang Tan, Chung-Wei Wu, Yong-Ci Zhang, Ya-Huan Lee, Chao Cheng Lin, Hui-Chun Huang and Simon M Sze

Semicond. Sci. Technol., 2023, 38, 085004
DOI: 10.1088/1361-6641/acde9f

Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

Zhen Fan, Juanxiu Xiao, Jingxian Wang, Lei Zhang, Jinyu Deng, Ziyan Liu, Zhili Dong, John Wang and Jingsheng Chen

Applied Physics Letters, 2016, 108
DOI: 10.1063/1.4953461

Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Keyu Bao, Jiajia Liao, Fei Yan, Shijie Jia, Binjian Zeng, Qiong Yang, Min Liao and Yichun Zhou

ACS Appl. Electron. Mater., 2023, 5, 4615
DOI: 10.1021/acsaelm.3c00756

RETRACTED ARTICLE: Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities

Ran Jiang, Xianghao Du, Weideng Sun, Zuyin Han and Zhengran Wu

Sci Rep, 2015, 5
DOI: 10.1038/srep15574

Flexible and wake-up free Hf 0.5Zr 0.5O 2 ferroelectric thin films with ultra-low operation voltage and high polarization

Jun-Hui Wang, Tian-Peng Duan, Jia-Jia Liao, Zhi-Peng Wang, Xin-Ran Huang, Shi-Jie Jia, Ke-Yu Bao, Yu-Xin Fan, Bing-Jian Zeng, Li-Mei Jiang, Min Liao, Yi-Chun Zhou, Qiong Yang and Jie Jiang

Journal of Advanced Ceramics, 2024, 13, 1844
DOI: 10.26599/JAC.2024.9220981

Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

Ryun-Han Koo, Wonjun Shin, Kyung Kyu Min, Dongseok Kwon, Dae Hwan Kim, Jae-Joon Kim, Daewoong Kwon and Jong-Ho Lee

IEEE Electron Device Lett., 2023, 44, 164
DOI: 10.1109/LED.2022.3223340

Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications

Jihyung Kim, Dahye Kim, Kyung Kyu Min, Matthias Kraatz, Taeyoung Han and Sungjun Kim

Advanced Intelligent Systems, 2023, 5
DOI: 10.1002/aisy.202300080

Strong photoluminescence of the porous silicon with HfO2-filled microcavities

Ran Jiang, Zhengran Wu, Xianghao Du, Zuyin Han and Weideng Sun

Applied Physics Letters, 2015, 106
DOI: 10.1063/1.4922879

Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors

Sumi Lee, Nicolò Ronchi, Jasper Bizindavyi, Mihaela I. Popovici, Kaustuv Banerjee, Amey Walke, Romain Delhougne, Jan Van Houdt and Changhwan Shin

IEEE Trans. Electron Devices, 2023, 70, 2568
DOI: 10.1109/TED.2023.3254509

Gradient Zn-doped HfCeO ferroelectric synapse with fast domain switching

Junhui Wang, Jiajia Liao, Tongkun Zhu, Zhipeng Wang, Qiong Yang, Hongze Liu, Shijie Jia, Jin Huang, Sirui Zhang, Jiayi Hu, Jie Jiang, Limei Jiang and Yichun Zhou

Chemical Engineering Journal, 2025, 515, 163407
DOI: 10.1016/j.cej.2025.163407

Role of domain walls on imprint and fatigue in HfO2 -based ferroelectrics

Muting Xie, Hongyu Yu, Binhua Zhang, Changsong Xu and Hongjun Xiang

Phys. Rev. B, 2025, 111
DOI: 10.1103/PhysRevB.111.184108

Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2

Kun Yang, Hyojun Choi, Ji Sang Ahn, Eun Ji Ju, Dong In Han, Se Hyun Kim, Ju Yong Park, Heejin Hong, Kwan Hyun Park, Jeong Hwan Han and Min Hyuk Park

Journal of Materiomics, 2025, 11, 101110
DOI: 10.1016/j.jmat.2025.101110

Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun and Cheol Seong Hwang

Advanced Materials, 2016, 28, 7956
DOI: 10.1002/adma.201602787

Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf0.5Zr0.5O2 Thin Films

Aniruddh Shekhawat, Glen Walters, Ching-Chang Chung, Roberto Garcia, Yang Liu, Jacob Jones, Toshikazu Nishida and Saeed Moghaddam

ECS J. Solid State Sci. Technol., 2020, 9, 024011
DOI: 10.1149/2162-8777/ab6b13

Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films

Ah-Jin Cho, Jihoon Jeon, Hong Keun Chung, In-Hwan Baek, Kun Yang, Min Hyuk Park, Seung-Hyub Baek and Seong Keun Kim

Ceramics International, 2022, 48, 3280
DOI: 10.1016/j.ceramint.2021.10.102

Comprehensive Understanding of Fatigue, Breakdown, and Recovery Mechanism by Thickness Scaling in Hf0.5Zr0.5O2/Ge MF(I)S Capacitors for Low Writing Voltages

Jai-Youn Jeong, Kyeol Ko, Changhwan Shin and Jae-Hoon Han

ACS Appl. Electron. Mater., 2025, 7, 6770
DOI: 10.1021/acsaelm.5c00500

Back‐End CMOS Compatible and Flexible Ferroelectric Memories for Neuromorphic Computing and Adaptive Sensing

Sayani Majumdar

Advanced Intelligent Systems, 2022, 4
DOI: 10.1002/aisy.202100175

Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

Beom Yong Kim, Baek Su Kim, Seung Dam Hyun, Ho Hyun Kim, Yong Bin Lee, Hyun Woo Park, Min Hyuk Park and Cheol Seong Hwang

Applied Physics Letters, 2020, 117
DOI: 10.1063/5.0011663

Temperature-Dependent Field Cycling Behavior of Ferroelectric Hafnium Zirconium Oxide (HZO) MFM Capacitors

Sourabh Jindal, Sanjeev Kumar Manhas, Simone Balatti, Arvind Kumar and Mahendra Pakala

IEEE Trans. Electron Devices, 2022, 69, 3990
DOI: 10.1109/TED.2022.3172244

Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications

Vineetha Mukundan, Karsten Beckmann, Kandabara Tapily, Steven Consiglio, Robert Clark, Gert Leusink, Nathaniel Cady and Alain C. Diebold

MRS Advances, 2019, 4, 545
DOI: 10.1557/adv.2019.148

In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity

Shikai Liu, Xingyu Li, Gang Li, Shaoan Yan, Yingfang Zhu, Yujie Wu, Qin Jiang, Yang Zhan and Minghua Tang

Coatings, 2024, 14, 1121
DOI: 10.3390/coatings14091121

Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films

Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Baek Su Kim and Cheol Seong Hwang

ACS Appl. Mater. Interfaces, 2018, 10, 35374
DOI: 10.1021/acsami.8b13173

Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films

Aniruddh Shekhawat, Glen Walters, Ching-Chang Chung, Roberto Garcia, Yang Liu, Jacob Jones, Toshikazu Nishida and Saeed Moghaddam

Thin Solid Films, 2019, 677, 142
DOI: 10.1016/j.tsf.2019.03.031

Impact of Ultrathin TiO2 Interlayer on the Structure and Properties of All Atomic Layer Deposited TiN/Hf0.5Zr0.5O2/TiN Ferroelectric System

Xin-Xin Wang, Wen-Juan Ding, Pan-Deng Xuan, Pei-Jie Jiao, Fu-Rui Teng, Lin Zhu, Xiang Li, Wei-Min Li and Ai-Dong Li

IEEE Trans. Electron Devices, 2025, 72, 6015
DOI: 10.1109/TED.2025.3614242

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

Si Joon Kim, Jaidah Mohan, Scott R. Summerfelt and Jiyoung Kim

JOM, 2019, 71, 246
DOI: 10.1007/s11837-018-3140-5

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

Zhen Fan, Jinyu Deng, Jingxian Wang, Ziyan Liu, Ping Yang, Juanxiu Xiao, Xiaobing Yan, Zhili Dong, John Wang and Jingsheng Chen

Applied Physics Letters, 2016, 108
DOI: 10.1063/1.4939660

Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata and Atsushi Ogura

Microelectronic Engineering, 2019, 215, 111013
DOI: 10.1016/j.mee.2019.111013

Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata and Atsushi Ogura

APL Materials, 2019, 7
DOI: 10.1063/1.5096626

Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films

Xianlong Cheng, Chao Zhou, Baichen Lin, Zhenni Yang, Shanquan Chen, Kelvin H.L. Zhang and Zuhuang Chen

Applied Materials Today, 2023, 32, 101804
DOI: 10.1016/j.apmt.2023.101804

Wake-Up Mechanism With De-Pinning Dynamics in Ultrathin Hf0.5Zr0.5O2: Understanding Frequency and Temperature Dependences

Kosuke Ito, Mitsuru Takenaka, Shinichi Takagi and Kasidit Toprasertpong

IEEE Trans. Electron Devices, 2025, 72, 7145
DOI: 10.1109/TED.2025.3628364

Data retention and low voltage operation of Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions

Aniruddh Shekhawat, Glen Walters, Ning Yang, Jing Guo, Toshikazu Nishida and Saeed Moghaddam

Nanotechnology, 2020, 31, 39LT01
DOI: 10.1088/1361-6528/ab9cf7

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf0.5Zr0.5O2 Thin Films

Furqan Mehmood, Thomas Mikolajick and Uwe Schroeder

Physica Status Solidi (a), 2020, 217
DOI: 10.1002/pssa.202000281

Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode

Kun Yang, Gi-Yeop Kim, Jin Joo Ryu, Dong Hyun Lee, Ju Yong Park, Se Hyun Kim, Geun Hyeong Park, Geun Taek Yu, Gun Hwan Kim, Si Young Choi and Min Hyuk Park

Materials Science in Semiconductor Processing, 2023, 164, 107565
DOI: 10.1016/j.mssp.2023.107565

Influence of annealing atmosphere on polarization behaviors of Hf0.5Zr0.5O2 ferroelectric films deposited on Ti electrodes

Haiyan Chen, Chengfeng Jiang, Ying Chen, Lei Liu, Zhongna Yan, Chuanchang Li and Dou Zhang

Ceramics International, 2024, 50, 42789
DOI: 10.1016/j.ceramint.2024.08.124

Simultaneously achieving high-κ and strong ferroelectricity in Hf0.5Zr0.5O2 thin film by structural stacking design

Yuchen Wang, Jiachen Li, Hansheng Zhu, Haifeng Bu, Xinzhe Du, Shengchun Shen, Yuewei Yin and Xiaoguang Li

Journal of Materiomics, 2025, 11, 101016
DOI: 10.1016/j.jmat.2025.101016

A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering

Hyo‐Bae Kim, Kyun Seong Dae, Youkyoung Oh, Seung‐Won Lee, Yoseop Lee, Seung‐Eon Ahn, Jae Hyuck Jang and Ji‐Hoon Ahn

Adv Materials Inter, 2022, 9
DOI: 10.1002/admi.202102528

Enhancing ferroelectricity in dopant-free hafnium oxide

Ashish Pal, Vijay Kris Narasimhan, Stephen Weeks, Karl Littau, Dipankar Pramanik and Tony Chiang

Applied Physics Letters, 2017, 110
DOI: 10.1063/1.4973928

Temperature dependent polarization-switching behavior in Hf0.5Zr0.5O2 ferroelectric film

Haiyan Chen, Lin Tang, Leyang Liu, Yonghong Chen, Hang Luo, Xi Yuan and Dou Zhang

Materialia, 2020, 14, 100919
DOI: 10.1016/j.mtla.2020.100919

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu, I. Fina, R. Bachelet, G. Saint-Girons, S. Estandía, J. Gázquez, J. Fontcuberta and F. Sánchez

Applied Physics Letters, 2019, 114
DOI: 10.1063/1.5096002

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory

Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park, Young Hwan Lee, Yong Bin Lee, Beom Yong Kim, Ho Hyun Kim, Baek Su Kim and Cheol Seong Hwang

Adv Elect Materials, 2020, 6
DOI: 10.1002/aelm.202000631

Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films

Changyong Oh, Amit Tewari, Kyungkwan Kim, Ulayil Sajesh Kumar, Changhwan Shin, Minho Ahn and Sanghun Jeon

Nanotechnology, 2019, 30, 505204
DOI: 10.1088/1361-6528/ab3c8f

High Pressure Microwave Annealing Effect on Electrical Properties of HfxZr1–xO Films near Morphotropic Phase Boundary

Minhyun Jung, Chaeheon Kim, Junghyeon Hwang, Giuk Kim, Hunbeom Shin, Venkateswarlu Gaddam and Sanghun Jeon

ACS Appl. Electron. Mater., 2023, 5, 4826
DOI: 10.1021/acsaelm.3c00623

Review of Electrical Characterization of Ceramic Thin Films for the Next Generation Semiconductor Devices

Donghyun Lee, Kun Yang, Ju-Yong Park and Min Hyuk Park

Ceramist, 2019, 22, 332
DOI: 10.31613/ceramist.2019.22.4.03

Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing

Taeho Kim and Sanghun Jeon

IEEE Trans. Electron Devices, 2018, 65, 1771
DOI: 10.1109/TED.2018.2816968