Plasmonics with two-dimensional semiconductors: from basic research to technological applications

Amit Agarwal, Miriam S. Vitiello, Leonardo Viti, Anna Cupolillo and Antonio Politano

Nanoscale, 2018, 10, 8938
DOI: 10.1039/C8NR01395K

Excited state spectroscopy and spin splitting in single layer MoS2 quantum dots

P. Kumar, H. Kim, S. Tripathy, K. Watanabe, T. Taniguchi, K. S. Novoselov and D. Kotekar-Patil

Nanoscale, 2023, 15, 18203
DOI: 10.1039/D3NR03844K

In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures

Wei Wei, Ying Dai and Baibiao Huang

Phys. Chem. Chem. Phys., 2016, 18, 15632
DOI: 10.1039/C6CP02741E

Manipulation of pseudo-spin guiding and flat bands for topological edge states

Zhen Jiang, Yong-feng Gao, Liu He, Jia-ping Sun, He Song and Quan Wang

Phys. Chem. Chem. Phys., 2019, 21, 11367
DOI: 10.1039/C9CP00789J

How to distinguish between interacting and noninteracting molecules in tunnel junctions

Miguel A. Sierra, David Sánchez, Alvar R. Garrigues, Enrique del Barco, Lejia Wang and Christian A. Nijhuis

Nanoscale, 2018, 10, 3904
DOI: 10.1039/C7NR05739C

Quantum emitters and detectors based on 2D van der Waals materials

Madhura Ghosh Dastidar, Immanuel Thekkooden, Pramoda K. Nayak and Vidya Praveen Bhallamudi

Nanoscale, 2022, 14, 5289
DOI: 10.1039/D1NR08193D

Single electron transistor based charge sensors: fabrication challenges and opportunities

Jency Rubia J, Julaiba Tahsina Mazumder, Arun B. Aloshious and Ravindra Kumar Jha

Nanoscale, 2025, 17, 11960
DOI: 10.1039/D5NR00384A

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor

Kumar Gaurav, Boddepalli SanthiBhushan, Ravi Mehla and Anurag Srivastava

Journal of Elec Materi, 2021, 50, 1022
DOI: 10.1007/s11664-020-08663-0

A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges

Mayank Shrivastava and V. Ramgopal Rao

Nano Lett., 2021, 21, 6359
DOI: 10.1021/acs.nanolett.1c00729

Maja Remskar, Andreas K. Hüttel, Tatiana V. Shubina, Alan Seabaugh, Sara Fathipour, Robert Lawrowski and Rupert Schreiner

Israel Journal of Chemistry, 2022, 62
DOI: 10.1002/ijch.202100100

Impact of Hydrogen Adsorption on the Performance of a Single Electron Transistor Utilizing Fullerene Quantum Dots

Vahideh Khademhosseini, Daryoosh Dideban, Mohammad Taghi Ahmadi, Razali Ismail and Hadi Heidari

ECS J. Solid State Sci. Technol., 2018, 7, M191
DOI: 10.1149/2.0281811jss

2D superconductivity and vortex dynamics in 1T-MoS2

Chithra H. Sharma, Ananthu P. Surendran, Sangeeth S. Varma and Madhu Thalakulam

Commun Phys, 2018, 1
DOI: 10.1038/s42005-018-0091-7

Synthesis and structural analysis of graphene nanosheets via microwave atmospheric pressure plasma

Waqas Iqbal, Najeeb- Ur Rehman and Niaz Wali

Int. J. Mod. Phys. B, 2025, 39
DOI: 10.1142/S0217979225400430

Quantum dot behavior in transition metal dichalcogenides nanostructures

Gang Luo, Zhuo-Zhi Zhang, Hai-Ou Li, Xiang-Xiang Song, Guang-Wei Deng, Gang Cao, Ming Xiao and Guo-Ping Guo

Front. Phys., 2017, 12
DOI: 10.1007/s11467-017-0652-3

Molecular switching operation in gate constricted interface of MoS2 and hBN heterostructure

Rahul Tripathi, Pritam Bhattacharyya, Sukanta Nandi, Alok Shukla and Abha Misra

Applied Materials Today, 2021, 23, 100999
DOI: 10.1016/j.apmt.2021.100999

Nickel particle–enabled width-controlled growth of bilayer molybdenum disulfide nanoribbons

Xufan Li, Baichang Li, Jincheng Lei, Ksenia V. Bets, Xiahan Sang, Emmanuel Okogbue, Yang Liu, Raymond R. Unocic, Boris I. Yakobson, James Hone and Avetik R. Harutyunyan

Sci. Adv., 2021, 7
DOI: 10.1126/sciadv.abk1892

Single photon sources and single electron transistors in two-dimensional materials

D. Litvinov, A. Wu, M. Barbosa, K. Vaklinova, M. Grzeszczyk, G. Baldi, M. Zhu and M. Koperski

Materials Science and Engineering: R: Reports, 2025, 163, 100928
DOI: 10.1016/j.mser.2025.100928

A complete set of logic gates with an identical single-stage structure based on periodic nature of single-electron devices

Mohammad Javad Sharifi and Mehdi Ahmadian

J Comput Electron, 2021, 20, 195
DOI: 10.1007/s10825-020-01590-7

Electrical control of charged carriers and excitons in atomically thin materials

Ke Wang, Kristiaan De Greve, Luis A. Jauregui, Andrey Sushko, Alexander High, You Zhou, Giovanni Scuri, Takashi Taniguchi, Kenji Watanabe, Mikhail D. Lukin, Hongkun Park and Philip Kim

Nature Nanotech, 2018, 13, 128
DOI: 10.1038/s41565-017-0030-x

Local piezoelectric doping of monolayer WSe2

P. A. Balunov, A. V. Ankundinov, I. D. Breev, M. S. Dunaevskiy, A. S. Goltaev, A. I. Galimov, V. N. Jmerik, K. V. Likhachev, M. V. Rakhlin, A. A. Toropov, A. S. Vlasov and A. M. Mintairov

Applied Physics Letters, 2023, 122
DOI: 10.1063/5.0151993

Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator

Maximilian Russ, Csaba G Péterfalvi and Guido Burkard

J. Phys.: Condens. Matter, 2020, 32, 165301
DOI: 10.1088/1361-648X/ab613f

Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures

Chithra H. Sharma and Madhu Thalakulam

Sci Rep, 2017, 7
DOI: 10.1038/s41598-017-00857-7

Gate‐Controlled Quantum Dots Based on 2D Materials

Fang‐Ming Jing, Zhuo‐Zhi Zhang, Guo‐Quan Qin, Gang Luo, Gang Cao, Hai‐Ou Li, Xiang‐Xiang Song and Guo‐Ping Guo

Adv Quantum Tech, 2022, 5
DOI: 10.1002/qute.202100162

Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS2

Bum-Kyu Kim, Dong-Hwan Choi, Byung-Sung Yu, Minsoo Kim, Kenji Watanabe, Takashi Taniguchi, Ju-Jin Kim and Myung-Ho Bae

Nanotechnology, 2021, 32, 195207
DOI: 10.1088/1361-6528/abe262

Nanomaterials for Quantum Information Science and Engineering

Adam Alfieri, Surendra B. Anantharaman, Huiqin Zhang and Deep Jariwala

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202109621

Graphene and two-dimensional materials for silicon technology

Deji Akinwande, Cedric Huyghebaert, Ching-Hua Wang, Martha I. Serna, Stijn Goossens, Lain-Jong Li, H.-S. Philip Wong and Frank H. L. Koppens

Nature, 2019, 573, 507
DOI: 10.1038/s41586-019-1573-9

Surface Gate-Defined Quantum Dots in MoS2 with Bi Contacts

Riku Tataka, Alka Sharma, Motoya Shinozaki, Tomoya Johmen, Takeshi Kumasaka, Yong P. Chen and Tomohiro Otsuka

J. Phys. Soc. Jpn., 2024, 93
DOI: 10.7566/JPSJ.93.094601

0D/2D Heterostructures Vertical Single Electron Transistor

Louis Donald Notemgnou Mouafo, Florian Godel, Laurent Simon, Yannick J. Dappe, Walid Baaziz, Ulrich Nguétchuissi Noumbé, Etienne Lorchat, Marie‐Blandine Martin, Stéphane Berciaud, Bernard Doudin, Ovidiu Ersen, Bruno Dlubak, Pierre Seneor and Jean‐Francois Dayen

Adv Funct Materials, 2021, 31
DOI: 10.1002/adfm.202008255

XNOR-Nets with SETs: Proposal for a binarised convolution processing elements with Single-Electron Transistors

Varun Bheemireddy

Sci Rep, 2022, 12
DOI: 10.1038/s41598-022-13180-7

All two-input logic gates by a single-stage single electron box

Mohammad Javad Sharifi and Mehdi Ahmadian

International Journal of Electronics, 2018, 105, 1598
DOI: 10.1080/00207217.2018.1477193

Circular quantum dots in twisted bilayer graphene

M. Mirzakhani, F. M. Peeters and M. Zarenia

Phys. Rev. B, 2020, 101
DOI: 10.1103/PhysRevB.101.075413

Cryogenic Materials and Circuit Integration for Quantum Computers

Wei-Chen Chien, Shun-Jhou Jhan, Kuei-Lin Chiu, Yu-xi Liu, Eric Kao and Ching-Ray Chang

Journal of Elec Materi, 2020, 49, 6844
DOI: 10.1007/s11664-020-08442-x

Surface effects on ionic Coulomb blockade in nanometer-size pores

Hiroya Tanaka, Hideo Iizuka, Yuriy V Pershin and Massimiliano Di Ventra

Nanotechnology, 2018, 29, 025703
DOI: 10.1088/1361-6528/aa9a14

Material Transfer and Contact Optimization in MoS2 Nanotube Devices

Robin T. K. Schock, Stefan Obloh, Jonathan Neuwald, Matthias Kronseder, Wolfgang Möckel, Matjaž Malok, Luka Pirker, Maja Remškar and Andreas K. Hüttel

Physica Status Solidi (b), 2025, 262
DOI: 10.1002/pssb.202400366

Coulomb blockade and Coulomb staircases in CoBi nanoislands on SrTiO3 (001)

Yumin Xia, Desheng Cai, Jiaqing Gao, Pengju Li, Kun Xie, Yuzhou Liu, Yitong Gu, Gan Yu, Ping Cui and Shengyong Qin

Nanotechnology, 2024, 35, 295601
DOI: 10.1088/1361-6528/ad1943

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Sejoon Lee, Youngmin Lee and Changmin Kim

Sci Rep, 2017, 7
DOI: 10.1038/s41598-017-11393-9

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature

Vahideh Khadem Hosseini, Mohammad Taghi Ahmadi and Razali Ismail

Journal of Elec Materi, 2018, 47, 4799
DOI: 10.1007/s11664-018-6366-7

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

Chit Siong Lau, Jing Yee Chee, Dickson Thian, Hiroyo Kawai, Jie Deng, Swee Liang Wong, Zi En Ooi, Yee-Fun Lim and Kuan Eng Johnson Goh

Sci Rep, 2019, 9
DOI: 10.1038/s41598-019-45392-9

Work-function-tuned electronic effect of a solute metal in the particles of copper alloys and the thin layer of surface oxides, and its influence on the catalysis on selective aerobic oxidation of benzylic alcohols

Dongxu Jia, Xinyan Zheng, Jiamei Ma, Chunxin Lu, Langlang You, Yi Pei, Zhaoyang Wang and Xiaoming Liu

Applied Surface Science, 2023, 611, 155549
DOI: 10.1016/j.apsusc.2022.155549

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

Arnab Pal, Shuo Zhang, Tanmay Chavan, Kunjesh Agashiwala, Chao‐Hui Yeh, Wei Cao and Kaustav Banerjee

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202109894

Electrically tunable MoSe2/WSe2 heterostructure-based quantum dot

Katarzyna Sadecka, Maciej Bieniek, Paulo E. Faria Junior, Arkadiusz Wójs, Paweł Hawrylak and Jarosław Pawłowski

Phys. Rev. B, 2025, 111
DOI: 10.1103/PhysRevB.111.115421

Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations

Paulo Jarschel, Jin Ho Kim, Louis Biadala, Maxime Berthe, Yannick Lambert, Richard M. Osgood, Gilles Patriarche, Bruno Grandidier and Jimmy Xu

ACS Appl. Mater. Interfaces, 2021, 13, 38450
DOI: 10.1021/acsami.1c06096

Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons

Dharmraj Kotekar-Patil, Jie Deng, Swee Liang Wong and Kuan Eng Johnson Goh

ACS Appl. Electron. Mater., 2019, 1, 2202
DOI: 10.1021/acsaelm.9b00390

Coulomb Blockade Spectroscopy of a MoS2 Nanotube

Simon Reinhardt, Luka Pirker, Christian Bäuml, Maja Remškar and Andreas K. Hüttel

Physica Rapid Research Ltrs, 2019, 13
DOI: 10.1002/pssr.201900251

2D materials for quantum information science

Xiaolong Liu and Mark C. Hersam

Nat Rev Mater, 2019, 4, 669
DOI: 10.1038/s41578-019-0136-x

Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2

S. Davari, J. Stacy, A.M. Mercado, J.D. Tull, R. Basnet, K. Pandey, K. Watanabe, T. Taniguchi, J. Hu and H.O.H. Churchill

Phys. Rev. Applied, 2020, 13
DOI: 10.1103/PhysRevApplied.13.054058

Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Simran Shahi, Asma Ahmed, Ruizhe Yang, Anthony Cabanillas, Anindita Chakravarty, Maomao Liu, Hemendra Nath Jaiswal, Yu Fu, Yutong Guo, Satyajeetsinh Shaileshsin Jadeja, Hariharan Murugesan, Anthony Butler, Chu Te Chen, Joel Muhigirwa, Mohamed Enaitalla, Jun Liu, Fei Yao and Huamin Li

Journal of Vacuum Science & Technology B, 2023, 41
DOI: 10.1116/6.0002888

Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots

Teymour Talha-Dean, Yaoju Tarn, Subhrajit Mukherjee, John Wellington John, Ding Huang, Ivan A. Verzhbitskiy, Dasari Venkatakrishnarao, Sarthak Das, Rainer Lee, Abhishek Mishra, Shuhua Wang, Yee Sin Ang, Kuan Eng Johnson Goh and Chit Siong Lau

ACS Appl. Mater. Interfaces, 2024, 16, 31738
DOI: 10.1021/acsami.4c03639

A diagrammatic approach to single-electron spintronics and a new analytical model for ferromagnetic single-electron transistors

Mehdi Ahmadian and Mohammad Javad Sharifi

AEU - International Journal of Electronics and Communications, 2019, 102, 62
DOI: 10.1016/j.aeue.2019.02.015

Quantum transport through MoS2 constrictions defined by photodoping

Alexander Epping, Luca Banszerus, Johannes Güttinger, Luisa Krückeberg, Kenji Watanabe, Takashi Taniguchi, Fabian Hassler, Bernd Beschoten and Christoph Stampfer

J. Phys.: Condens. Matter, 2018, 30, 205001
DOI: 10.1088/1361-648X/aabbb8

Effective theory of monolayer TMDC double quantum dots

Alessandro David, Guido Burkard and Andor Kormányos

2D Mater., 2018, 5, 035031
DOI: 10.1088/2053-1583/aac17f

Non‐Destructive Low‐Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots

Robin T. K. Schock, Jonathan Neuwald, Wolfgang Möckel, Matthias Kronseder, Luka Pirker, Maja Remškar and Andreas K. Hüttel

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202209333

Electrotunable artificial molecules based on van der Waals heterostructures

Zhuo-Zhi Zhang, Xiang-Xiang Song, Gang Luo, Guang-Wei Deng, Vahid Mosallanejad, Takashi Taniguchi, Kenji Watanabe, Hai-Ou Li, Gang Cao, Guang-Can Guo, Franco Nori and Guo-Ping Guo

Sci. Adv., 2017, 3
DOI: 10.1126/sciadv.1701699

Electron spin relaxation in a transition-metal dichalcogenide quantum dot

Alexander J Pearce and Guido Burkard

2D Mater., 2017, 4, 025114
DOI: 10.1088/2053-1583/aa7364