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Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

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Introducing CuO films as hole transport materials to GaN-based heterojunction LED

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Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents

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Fluorescent Nano-Biomass Dots: Ultrasonic-Assisted Extraction and Their Application as Nanoprobe for Fe3+ detection

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Fabrication of flexible UV-B photodetectors made of MgxZn1-xO films on PI substrate for enhanced sensitivity by piezophototronic effect

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All-inorganic green light-emitting diode based on p-NiO/CsPbBr3/n-GaN heterojunction structure

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Ultraviolet irradiation dosimeter based on persistent photoconductivity effect of ZnO*

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Toward eco‐friendly and stable halide perovskite‐inspired materials for light‐emitting devices applications by dimension classification: Recent advances and opportunities

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Improving the photoelectrical characteristics of self-powered p-GaN film/n-ZnO nanowires heterojunction ultraviolet photodetectors through gallium and indium co-doping

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Materials Science in Semiconductor Processing, 2021, 121, 105295
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Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

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