Epitaxial growth of GaN films on unconventional oxide substrates

Wenliang Wang, Weijia Yang, Haiyan Wang and Guoqiang Li

J. Mater. Chem. C, 2014, 2, 9342
DOI: 10.1039/C4TC01655F

Epitaxial growth and its mechanism of GaN films on nitrided LiGaO2(001) substrates by pulsed laser deposition

Weijia Yang, Wenliang Wang, Zuolian Liu, Yunhao Lin, Shizhong Zhou, Huirong Qian and Guoqiang Li

CrystEngComm, 2015, 17, 1073
DOI: 10.1039/C4CE01785D

The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer

Gaoqiang Deng, Yuantao Zhang, Zhen Huang, Long Yan, Pengchong Li, Xu Han, Ye Yu, Liang Chen, Degang Zhao and Guotong Du

CrystEngComm, 2017, 19, 4330
DOI: 10.1039/C7CE00840F

Epitaxial growth of high-quality AlN films on metallic nickel substrates by pulsed laser deposition

Wenliang Wang, Weijia Yang, Zuolian Liu, Yunhao Lin, Shizhong Zhou, Huirong Qian, Haiyan Wang, Zhiting Lin and Guoqiang Li

RSC Adv., 2014, 4, 27399
DOI: 10.1039/C4RA03581J

Epitaxial growth of nonpolar m-plane ZnO epilayers and ZnO/Zn0.55Mg0.45O multiple quantum wells on a LiGaO2 (100) substrate

T. Yan, C.-Y. J. Lu, L. Chang, M. M. C. Chou, K. H. Ploog, C.-M. Chiang and Ning Ye

RSC Adv., 2015, 5, 104798
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White light-emitting diodes of high color rendering index with polymer dot phosphors

Cheng Ruan, Xue Bai, Chun Sun, Haobin Chen, Changfeng Wu, Xiongbin Chen, Hongda Chen, Vicki L. Colvin and William W. Yu

RSC Adv., 2016, 6, 106225
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A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

Wenliang Wang, Yunhao Lin, Weijia Yang, Zuolian Liu, Shizhong Zhiou, Huirong Qian, Fangliang Gao, Lei Wen and Guoqiang Li

J. Mater. Chem. C, 2014, 2, 4112
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Microstructural and optical properties of high-quality ZnO epitaxially grown on a LiGaO2 substrate

Chenlong Chen, Tao Yan, Shih-Hsun Yu, Chun-Yu Lee, Chi-Wei Chang and Mitch M. C. Chou

RSC Adv., 2015, 5, 35405
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Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Asma Belaid and Abdelkader Hamdoune

J. Semicond., 2019, 40, 032802
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Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition

Weijia Yang, Wenliang Wang, Haiyan Wang, Yunnong Zhu and Guoqiang Li

Materials Science in Semiconductor Processing, 2016, 43, 82
DOI: 10.1016/j.mssp.2015.12.008

Employing low-temperature barriers to achieve strain-relaxed and high-performance GaN-based LEDs

Zhiting Lin, Haiyan Wang, Wenliang Wang, Yunhao Lin, Meijuan Yang, Shuqi Chen and Guoqiang Li

Opt. Express, 2016, 24, 11885
DOI: 10.1364/OE.24.011885

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Guoqiang Li, Wenliang Wang, Weijia Yang and Haiyan Wang

Surface Science Reports, 2015, 70, 380
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Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates

Weijia Yang, Wenliang Wang, Yunhao Lin, Zuolian Liu, Shizhong Zhou, Huirong Qian and Guoqiang Li

Journal of Elec Materi, 2015, 44, 2670
DOI: 10.1007/s11664-015-3705-9

Multinary wurtzite-type oxide semiconductors: present status and perspectives

Issei Suzuki and Takahisa Omata

Semicond. Sci. Technol., 2017, 32, 013007
DOI: 10.1088/1361-6641/32/1/013007

Effect of p-GaN layer on the properties of InGaN/GaN green light-emitting diodes

Wenliang Wang, Zuolian Liu, Shizhong Zhou, Weijia Yang, Yunhao Lin, Haiyan Wang, Zhiting Lin, Huirong Qian and Guoqiang Li

J. Mater. Res., 2015, 30, 477
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Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction

Zhiting Lin, Xiaofeng Chen, Yuhan Zhu, Xiwu Chen, Liegeng Huang and Guoqiang Li

IEEE Trans. Electron Devices, 2018, 65, 5373
DOI: 10.1109/TED.2018.2872525

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

Wenliang Wang, Weijia Yang, Fangliang Gao, Yunhao Lin and Guoqiang Li

Sci Rep, 2015, 5
DOI: 10.1038/srep09315

Interface characterization of atomic layer deposited high-k on non-polar GaN

Ye Jia, Ke Zeng and Uttam Singisetti

Journal of Applied Physics, 2017, 122
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Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes

Zhiting Lin, Haiyan Wang, Yunhao Lin, Meijuan Yang, Wenliang Wang and Guoqiang Li

J. Phys. D: Appl. Phys., 2016, 49, 115112
DOI: 10.1088/0022-3727/49/11/115112

Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium

Zhiwei Si, Zongliang Liu, Yaoqiao Hu, Shunan Zheng, Xiaoming Dong, Xiaodong Gao, Jianfeng Wang and Ke Xu

Applied Surface Science, 2022, 578, 152073
DOI: 10.1016/j.apsusc.2021.152073

High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

Robert Koester, Daniel Sager, Wolf-Alexander Quitsch, Oliver Pfingsten, Artur Poloczek, Sarah Blumenthal, Gregor Keller, Werner Prost, Gerd Bacher and Franz-Josef Tegude

Nano Lett., 2015, 15, 2318
DOI: 10.1021/nl504447j

Implementation of slow and smooth etching of GaN by inductively coupled plasma

Xilin Li, Ping Ma, Xiaoli Ji, Tongbo Wei, Xiaoyu Tan, Junxi Wang and Jinmin Li

J. Semicond., 2018, 39, 113002
DOI: 10.1088/1674-4926/39/11/113002

Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates

Shizhong Zhou, Zhiting Lin, Haiyan Wang, Tian Qiao, Liyi Zhong, Yunhao Lin, Wenliang Wang, Weijia Yang and Guoqiang Li

Journal of Alloys and Compounds, 2014, 610, 498
DOI: 10.1016/j.jallcom.2014.05.035